Structure and property of directionally grown SiGe multicrystals with microscopic compositional distribution

Kozo Fujiwara, Tatsuya Takahashi, Noritaka Usami, Toru Ujihara, Gen Sazaki, Kazuo Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Mullticrystalline SiGe with microscopic compositional distributions is an attractive material for a new high efficiency solar cell because it has a possibility to absorb the near infrared light, which is transparent to Si. In this study, structural property and absorption coefficient was investigated for mc-SiGe and those were compared with mc-Si. Columnar structure for mc-SiGe was obtained using directional growth method. It was found that the preferential crystallographic orientation of mc-SiGe is {110} plane, which is different from mc-Si. By measuring the absorption coefficient, we demonstrated that the introduction of microscopic compositional distribution in mc-SiGe is an effective way to increase absorption coefficient in longer wavelength. Mc-SiGe is therefore concluded to be promising for enabling the realization of low-cost and highly efficient solar cells.

Original languageEnglish
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages158-160
Number of pages3
Publication statusPublished - 2003
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: 2003 May 112003 May 18

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeA

Conference

ConferenceProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/TerritoryJapan
CityOsaka
Period03/5/1103/5/18

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