TY - JOUR
T1 - Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE
AU - Zhong, Aihua
AU - Fan, Ping
AU - Zhong, Yuanting
AU - Zhang, Dongping
AU - Li, Fu
AU - Luo, Jingting
AU - Xie, Yizhu
AU - Hane, Kazuhiro
N1 - Funding Information:
Aihua Zhong received the Dr.Eng. degree in Nano mechanics from Tohoku University, Sendai, Japan, in 2014. Since 2015, he has been an assistant professor with the College of Physics and Energy, Shenzhen University, China, where he is currently engaged in research and development of film growth and MEMS-based devices and sensors. Ping Fan received the Ph.D. degree in Physics from Chinese Academy of Sciences, Shanghai, China, in 1985. Since 1985, he has been an assistant professor, associate professor, and professor with the College of Physics and Energy, Shenzhen University, China, where he is currently engaged in research and development of film growth and micro device. Dongping Zhang received the Ph.D. degree from Chinese Academy of Sciences, Shanghai, China. Since 2007, he has been an assistant professor, associate professor, and professor with the College of Physics and Energy, Shenzhen University, China, where he is currently engaged in research and development of film growth. Yuanting Zhong graduated from Changan University, Xian, China, in 2012. From 2012 to 2014, she was an engineer in SAIC MOTOR. Since 2015, she has been an assistant researcher in the department of Automotive Engineering, Foshan Polytechnic, Foshan, China. Fu Li received the Dr.Eng. degree in Materials Science and Engineering from Tsinghua University, Beijing, China, in 2013, followed by postdoc at Tsinghua University. Since 2016, she has been an assistant professor with the College of Physics and Energy, Shenzhen University, China, where she is currently engaged in research and development of film growth and thermoelectric materials. Jingting Luo received the Dr.Eng. degree in Materials Science and Engineering from Tsinghua University, Beijing, China, in 2011. Since 2012, he has been an assistant professor and associate professor with the College of Physics and Energy, Shenzhen University, China, where he is currently engaged in research and development of micro device and biosensors. Yizhu Xie received the Ph.D. degree (2012) in condensed matter physics from Lanzhou University, China, followed by postdoc at The Hong Kong Polytechnic University. Since 2015, he has been an assistant professor with the College of Physics and Energy, Shenzhen University, China, where he is currently engaged in research and development of film growth and flexible electronic devices, including photodetectors, sensors, and flexible energy storage and conversion devices. Kazuhiro Hane received the M.S. and Dr.Eng. degree from Nagoya University, Nagoya, Japan, in 1980 and 1983, respectively. From 1983 to 1994, he was in the Department of Electrical Engineering, Nagoya University. From 1985 to 1986, he was a visiting researcher with the National Research Council of Canada. Since 1994, he has been a professor in the Gradual School of Mechanical Engineering, Tohoku University, Sendai, Japan, where he is currently engaged in research and development of optical microsensors and optical microelectromechanical systems.
Funding Information:
This work was supported by the National Natural Science Foundation of China (Grant No. 61504084), the Basical Research Program of Shenzhen (Grant No. JCYJ20160307144047526), and the Natural Science Foundation of SZU (Grant No. 201554, Grant No. 827-000187).
Publisher Copyright:
© 2018, The Author(s).
PY - 2018
Y1 - 2018
N2 - Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of ~ 80 and ~ 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication.
AB - Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of ~ 80 and ~ 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication.
KW - Al droplets
KW - GaN
KW - Growth model
KW - Nanowall network
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U2 - 10.1186/s11671-018-2461-1
DO - 10.1186/s11671-018-2461-1
M3 - Article
AN - SCOPUS:85041963835
SN - 1931-7573
VL - 13
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
M1 - 51
ER -