Structure study of thin RPECVD CdxZn1-xS films

N. I. Fainer; M. L. Kosinova; Yu M. Rumyantsev; E. A. Maximovski; M. Terauchi; K. Shibata; F. Satoh; M. Tanaka; N. P. Sysoeva; F. A. Kuznetsov

doi:10.1051/jp4:20013123

Structure study of thin RPECVD Cd_xZn_1-xS films

N. I. Fainer, M. L. Kosinova, Yu M. Rumyantsev, E. A. Maximovski, M. Terauchi, K. Shibata, F. Satoh, M. Tanaka, N. P. Sysoeva, F. A. Kuznetsov

IMRAM - Division of Measurements

RAS - Nikolaev Institute of Inorganic Chemistry, Siberian Branch

Research output: Contribution to journal › Conference article › peer-review

Abstract

Thin Cd_xZn_1-xS films have been deposited on Si(100), GaAs (100) and fused silica substrates at low pressure in the temperature range of 473-673 K by remote plasma enhanced chemical vapor deposition (RPECVD) using Cd/Zn(S₂CN(C₂H₅)₂) ₂·C₁₀H₈N₂ as single-source precursor. The influence of deposition conditions on physical and chemical properties of the films has been studied by ellipsometry, IR- and Raman spectroscopies, SEM, HREM, SAED, EDS and X-ray diffraction using synchrotron radiation. The zinc and cadmium concentration gradient along the film thickness was observed. The Cd_xZn_1-xS film is substitution solid solution with hexagonal texture structure.

Original language	English
Pages (from-to)	Pr3979-Pr3985
Journal	Journal De Physique. IV : JP
Volume	11
Issue number	3
DOIs	https://doi.org/10.1051/jp4:20013123
Publication status	Published - 2001
Event	13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece Duration: 2001 Aug 26 → 2001 Aug 31

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@article{fc92a067d8d04f208ca9453a1e1f134a,

title = "Structure study of thin RPECVD CdxZn1-xS films",

abstract = "Thin CdxZn1-xS films have been deposited on Si(100), GaAs (100) and fused silica substrates at low pressure in the temperature range of 473-673 K by remote plasma enhanced chemical vapor deposition (RPECVD) using Cd/Zn(S2CN(C2H5)2) 2·C10H8N2 as single-source precursor. The influence of deposition conditions on physical and chemical properties of the films has been studied by ellipsometry, IR- and Raman spectroscopies, SEM, HREM, SAED, EDS and X-ray diffraction using synchrotron radiation. The zinc and cadmium concentration gradient along the film thickness was observed. The CdxZn1-xS film is substitution solid solution with hexagonal texture structure.",

author = "Fainer, {N. I.} and Kosinova, {M. L.} and Rumyantsev, {Yu M.} and Maximovski, {E. A.} and M. Terauchi and K. Shibata and F. Satoh and M. Tanaka and Sysoeva, {N. P.} and Kuznetsov, {F. A.}",

year = "2001",

doi = "10.1051/jp4:20013123",

language = "English",

volume = "11",

pages = "Pr3979--Pr3985",

journal = "Journal De Physique. IV : JP",

issn = "1155-4339",

publisher = "Springer Verlag",

number = "3",

note = "13th European Conference on Chemical Vapor Deposition (EUROCVD 13) ; Conference date: 26-08-2001 Through 31-08-2001",

}

TY - JOUR

T1 - Structure study of thin RPECVD CdxZn1-xS films

AU - Fainer, N. I.

AU - Kosinova, M. L.

AU - Rumyantsev, Yu M.

AU - Maximovski, E. A.

AU - Terauchi, M.

AU - Shibata, K.

AU - Satoh, F.

AU - Tanaka, M.

AU - Sysoeva, N. P.

AU - Kuznetsov, F. A.

PY - 2001

Y1 - 2001

N2 - Thin CdxZn1-xS films have been deposited on Si(100), GaAs (100) and fused silica substrates at low pressure in the temperature range of 473-673 K by remote plasma enhanced chemical vapor deposition (RPECVD) using Cd/Zn(S2CN(C2H5)2) 2·C10H8N2 as single-source precursor. The influence of deposition conditions on physical and chemical properties of the films has been studied by ellipsometry, IR- and Raman spectroscopies, SEM, HREM, SAED, EDS and X-ray diffraction using synchrotron radiation. The zinc and cadmium concentration gradient along the film thickness was observed. The CdxZn1-xS film is substitution solid solution with hexagonal texture structure.

AB - Thin CdxZn1-xS films have been deposited on Si(100), GaAs (100) and fused silica substrates at low pressure in the temperature range of 473-673 K by remote plasma enhanced chemical vapor deposition (RPECVD) using Cd/Zn(S2CN(C2H5)2) 2·C10H8N2 as single-source precursor. The influence of deposition conditions on physical and chemical properties of the films has been studied by ellipsometry, IR- and Raman spectroscopies, SEM, HREM, SAED, EDS and X-ray diffraction using synchrotron radiation. The zinc and cadmium concentration gradient along the film thickness was observed. The CdxZn1-xS film is substitution solid solution with hexagonal texture structure.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034854705&partnerID=8YFLogxK

U2 - 10.1051/jp4:20013123

DO - 10.1051/jp4:20013123

M3 - Conference article

AN - SCOPUS:0034854705

SN - 1155-4339

VL - 11

SP - Pr3979-Pr3985

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 3

T2 - 13th European Conference on Chemical Vapor Deposition (EUROCVD 13)

Y2 - 26 August 2001 through 31 August 2001

ER -

Structure study of thin RPECVD Cd_xZn_1-xS films

Abstract

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