Structure study of thin RPECVD CdxZn1-xS films

N. I. Fainer, M. L. Kosinova, Yu M. Rumyantsev, E. A. Maximovski, M. Terauchi, K. Shibata, F. Satoh, M. Tanaka, N. P. Sysoeva, F. A. Kuznetsov

Research output: Contribution to journalConference articlepeer-review


Thin CdxZn1-xS films have been deposited on Si(100), GaAs (100) and fused silica substrates at low pressure in the temperature range of 473-673 K by remote plasma enhanced chemical vapor deposition (RPECVD) using Cd/Zn(S2CN(C2H5)2) 2·C10H8N2 as single-source precursor. The influence of deposition conditions on physical and chemical properties of the films has been studied by ellipsometry, IR- and Raman spectroscopies, SEM, HREM, SAED, EDS and X-ray diffraction using synchrotron radiation. The zinc and cadmium concentration gradient along the film thickness was observed. The CdxZn1-xS film is substitution solid solution with hexagonal texture structure.

Original languageEnglish
Pages (from-to)Pr3979-Pr3985
JournalJournal De Physique. IV : JP
Issue number3
Publication statusPublished - 2001
Event13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece
Duration: 2001 Aug 262001 Aug 31


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