In this paper we present the correlation between the impact ionization gate current with the 822 scattering parameter measured in the 50MHz - 6GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y 22 at low frequencies.
|Number of pages
|Conference Proceedings-International Conference on Indium Phosphide and Related Materials
|Published - 2004
|2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
Duration: 2004 May 31 → 2004 Jun 4