Study of Cristallographic Orientation of in situ β-Si3N4 Composite by Electron Back Scattered Diffraction (EBSD) Method

Y. Yasutomi; Y. Sakaida; N. Hirosaki; Y. Ikuhara

Study of Cristallographic Orientation of in situ β-Si₃N₄ Composite by Electron Back Scattered Diffraction (EBSD) Method

Y. Yasutomi, Y. Sakaida, N. Hirosaki, Y. Ikuhara

Research output: Contribution to journal › Article › peer-review

Abstract

It is important to analyze microstructures during the sintering stage in order to improve thermal conductivity and mechanical properties of in situ Si₃N₄ composite. In the present work, the in situ silicon nitride (Si₃N₄) composite was analyzed by the electron back scattered diffraction (EBSD) method using field emission-scanning electron microscopy with an orientation imaging microscopy analysis device. The following results were obtained. 1) Si₃N₄ ceramics of hexagonal structure was successfully analyzed by the EBSD method. 2) Elongated Si₃N₄ particles grew vertically in the alignment direction of seed grains. 3) Growth direction and side planes of the elongated Si₃N₄ particles were influenced by alignment of seed grains and the hot pressing pressure.

Original language	English
Pages (from-to)	31-34
Number of pages	4
Journal	Key Engineering Materials
Volume	161-163
Publication status	Published - 1999 Jan 1
Externally published	Yes

Keywords

Ceramics
Crystallographic orientation
Elongated SiN Particles
Microstructure
SiN

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Study of Cristallographic Orientation of in situ β-Si3N4 Composite by Electron Back Scattered Diffraction (EBSD) Method",

abstract = "It is important to analyze microstructures during the sintering stage in order to improve thermal conductivity and mechanical properties of in situ Si3N4 composite. In the present work, the in situ silicon nitride (Si3N4) composite was analyzed by the electron back scattered diffraction (EBSD) method using field emission-scanning electron microscopy with an orientation imaging microscopy analysis device. The following results were obtained. 1) Si3N4 ceramics of hexagonal structure was successfully analyzed by the EBSD method. 2) Elongated Si3N4 particles grew vertically in the alignment direction of seed grains. 3) Growth direction and side planes of the elongated Si3N4 particles were influenced by alignment of seed grains and the hot pressing pressure.",

keywords = "Ceramics, Crystallographic orientation, Elongated SiN Particles, Microstructure, SiN",

author = "Y. Yasutomi and Y. Sakaida and N. Hirosaki and Y. Ikuhara",

year = "1999",

month = jan,

day = "1",

language = "English",

volume = "161-163",

pages = "31--34",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications",

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T1 - Study of Cristallographic Orientation of in situ β-Si3N4 Composite by Electron Back Scattered Diffraction (EBSD) Method

AU - Yasutomi, Y.

AU - Sakaida, Y.

AU - Hirosaki, N.

AU - Ikuhara, Y.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - It is important to analyze microstructures during the sintering stage in order to improve thermal conductivity and mechanical properties of in situ Si3N4 composite. In the present work, the in situ silicon nitride (Si3N4) composite was analyzed by the electron back scattered diffraction (EBSD) method using field emission-scanning electron microscopy with an orientation imaging microscopy analysis device. The following results were obtained. 1) Si3N4 ceramics of hexagonal structure was successfully analyzed by the EBSD method. 2) Elongated Si3N4 particles grew vertically in the alignment direction of seed grains. 3) Growth direction and side planes of the elongated Si3N4 particles were influenced by alignment of seed grains and the hot pressing pressure.

AB - It is important to analyze microstructures during the sintering stage in order to improve thermal conductivity and mechanical properties of in situ Si3N4 composite. In the present work, the in situ silicon nitride (Si3N4) composite was analyzed by the electron back scattered diffraction (EBSD) method using field emission-scanning electron microscopy with an orientation imaging microscopy analysis device. The following results were obtained. 1) Si3N4 ceramics of hexagonal structure was successfully analyzed by the EBSD method. 2) Elongated Si3N4 particles grew vertically in the alignment direction of seed grains. 3) Growth direction and side planes of the elongated Si3N4 particles were influenced by alignment of seed grains and the hot pressing pressure.

KW - Ceramics

KW - Crystallographic orientation

KW - Elongated SiN Particles

KW - Microstructure

KW - SiN

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M3 - Article

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SN - 1013-9826

VL - 161-163

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JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

Study of Cristallographic Orientation of in situ β-Si₃N₄ Composite by Electron Back Scattered Diffraction (EBSD) Method

Abstract

Keywords

ASJC Scopus subject areas

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