Study of grain boundary structure of ceramics by electron backscattered diffraction (EBSD) analyses

Y. Yasutomi; Y. Sakaida; Y. Sawai; Y. Ikuhara; T. Yamamoto

Study of grain boundary structure of ceramics by electron backscattered diffraction (EBSD) analyses

Y. Yasutomi, Y. Sakaida, Y. Sawai, Y. Ikuhara, T. Yamamoto

Research output: Contribution to journal › Conference article › peer-review

Abstract

It is important to analyze the grain boundary structure because the crystallographic orientation of one grain matches the orientation of neighboring grains during the sintering process. In the present work, the in situ silicon nitride (Si₃N₄) composite is analyzed by the electron backscattered diffraction (EBSD) method using field emission-scanning electron microscopy (FE-SEM: JSM-6330F, JEOL) with an orientation imaging microscopy analysis device (TSL, Inc.). The following results were obtained: 1) Si₃N₄ ceramics of hexagonal structure was successfully analyzed by the EBSD method. 2) Elongated Si₃N₄ particles grew vertically in the alignment direction of seed grains. 3) Growth direction and side planes of the elongated Si₃N₄ particles are influenced by alignment of seed grains and the hot pressing pressure. 4) It is important to analyze microstructure during the sintering stage in order to improve thermal conductivity and mechanical properties of in situ Si₃N₄ composite.

Original language	English
Pages (from-to)	501-508
Number of pages	8
Journal	Ceramic Engineering and Science Proceedings
Volume	19
Issue number	3
Publication status	Published - 1998 Dec 1
Event	Proceedings of the 1998 22nd Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: A. Part 1 (of 2) - Cocoa Beach, FL, USA Duration: 1998 Jan 20 → 1998 Jan 24

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Cite this

@article{9bdf046dd5bf440ba8d81c86af554cd9,

title = "Study of grain boundary structure of ceramics by electron backscattered diffraction (EBSD) analyses",

abstract = "It is important to analyze the grain boundary structure because the crystallographic orientation of one grain matches the orientation of neighboring grains during the sintering process. In the present work, the in situ silicon nitride (Si3N4) composite is analyzed by the electron backscattered diffraction (EBSD) method using field emission-scanning electron microscopy (FE-SEM: JSM-6330F, JEOL) with an orientation imaging microscopy analysis device (TSL, Inc.). The following results were obtained: 1) Si3N4 ceramics of hexagonal structure was successfully analyzed by the EBSD method. 2) Elongated Si3N4 particles grew vertically in the alignment direction of seed grains. 3) Growth direction and side planes of the elongated Si3N4 particles are influenced by alignment of seed grains and the hot pressing pressure. 4) It is important to analyze microstructure during the sintering stage in order to improve thermal conductivity and mechanical properties of in situ Si3N4 composite.",

author = "Y. Yasutomi and Y. Sakaida and Y. Sawai and Y. Ikuhara and T. Yamamoto",

year = "1998",

month = dec,

day = "1",

language = "English",

volume = "19",

pages = "501--508",

journal = "Ceramic Engineering and Science Proceedings",

issn = "0196-6219",

publisher = "American Ceramic Society",

number = "3",

note = "Proceedings of the 1998 22nd Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: A. Part 1 (of 2) ; Conference date: 20-01-1998 Through 24-01-1998",

}

TY - JOUR

T1 - Study of grain boundary structure of ceramics by electron backscattered diffraction (EBSD) analyses

AU - Yasutomi, Y.

AU - Sakaida, Y.

AU - Sawai, Y.

AU - Ikuhara, Y.

AU - Yamamoto, T.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - It is important to analyze the grain boundary structure because the crystallographic orientation of one grain matches the orientation of neighboring grains during the sintering process. In the present work, the in situ silicon nitride (Si3N4) composite is analyzed by the electron backscattered diffraction (EBSD) method using field emission-scanning electron microscopy (FE-SEM: JSM-6330F, JEOL) with an orientation imaging microscopy analysis device (TSL, Inc.). The following results were obtained: 1) Si3N4 ceramics of hexagonal structure was successfully analyzed by the EBSD method. 2) Elongated Si3N4 particles grew vertically in the alignment direction of seed grains. 3) Growth direction and side planes of the elongated Si3N4 particles are influenced by alignment of seed grains and the hot pressing pressure. 4) It is important to analyze microstructure during the sintering stage in order to improve thermal conductivity and mechanical properties of in situ Si3N4 composite.

AB - It is important to analyze the grain boundary structure because the crystallographic orientation of one grain matches the orientation of neighboring grains during the sintering process. In the present work, the in situ silicon nitride (Si3N4) composite is analyzed by the electron backscattered diffraction (EBSD) method using field emission-scanning electron microscopy (FE-SEM: JSM-6330F, JEOL) with an orientation imaging microscopy analysis device (TSL, Inc.). The following results were obtained: 1) Si3N4 ceramics of hexagonal structure was successfully analyzed by the EBSD method. 2) Elongated Si3N4 particles grew vertically in the alignment direction of seed grains. 3) Growth direction and side planes of the elongated Si3N4 particles are influenced by alignment of seed grains and the hot pressing pressure. 4) It is important to analyze microstructure during the sintering stage in order to improve thermal conductivity and mechanical properties of in situ Si3N4 composite.

UR - http://www.scopus.com/inward/record.url?scp=0032318778&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032318778&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032318778

SN - 0196-6219

VL - 19

SP - 501

EP - 508

JO - Ceramic Engineering and Science Proceedings

JF - Ceramic Engineering and Science Proceedings

IS - 3

T2 - Proceedings of the 1998 22nd Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: A. Part 1 (of 2)

Y2 - 20 January 1998 through 24 January 1998

ER -

Study of grain boundary structure of ceramics by electron backscattered diffraction (EBSD) analyses

Abstract

ASJC Scopus subject areas

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