TY - GEN
T1 - Study of HfO 2-Based High-k Gate Insulators for GaN Power Device
AU - Nabatame, Toshihide
AU - Maeda, Erika
AU - Inoue, Mari
AU - Hirose, Masafumi
AU - Ochi, Ryota
AU - Sawada, Tomomi
AU - Irokawa, Yoshihiro
AU - Hashizume, Tamotsu
AU - Shiozaki, Koji
AU - Onaya, Takashi
AU - Tsukagoshi, Kazuhito
AU - Koide, Yasuo
N1 - Funding Information:
This work was supported by JSPS KAKENHI (Grant Nos. JP21J01667 and JP20H02189). A part of this work was also supported by the MEXT “Program for research and development of next-generation semiconductor to realize energy-saving society.” Program Grant Number JPJ005357. and MEXT-Program for Creation of Innovative Core Technology for Power Electronics Grant Number JPJ009777.The authors wish to thank Dr. A. Ohi, Dr. N. Ikeda, and the members of the nanofabrication group of the National Institute for Materials Science for their support during this study.
Publisher Copyright:
© 2021 ECS-The Electrochemical Society.
PY - 2021
Y1 - 2021
N2 - We discussed about usefulness of HfO 2-based high dielectric constant (High-k) materials such as HfO 2, HfSiO x and HfAlO x as gate insulator for GaN power device. Here, we systematically studied characteristics of Hf 0.55Al 0.45O x gate insulator which fabricated by plasma-enhanced atomic layer deposition and post-deposition annealing (PDA) at 800°C in N 2 ambient. The Hf 0.55Al 0.45O x film had an amorphous structure but Ga diffusion into Hf 0.55Al 0.45O x film was observed after PDA. The k-value of the Hf 0.55Al 0.45O x film was 17.2, which was larger than that of HfSiO x (13.5). The Hf 0.55Al 0.45O x also showed superior electrical properties such as a minimal flatband voltage (V fb) hysteresis ( +10 mV) and a relatively small V fb shift ( -0.95 V), as well as a low interface state density ( 1 1011 cm-2eV-1 at E c-E=0.25 eV), and a high breakdown electric field (8.6 MVcm-1). Based on these experimental data and previous our research of HfO 2 and HfSiO x films, we concluded the HfSiO x and HfAlO x had candidate materials as gate insulator for GaN power device.
AB - We discussed about usefulness of HfO 2-based high dielectric constant (High-k) materials such as HfO 2, HfSiO x and HfAlO x as gate insulator for GaN power device. Here, we systematically studied characteristics of Hf 0.55Al 0.45O x gate insulator which fabricated by plasma-enhanced atomic layer deposition and post-deposition annealing (PDA) at 800°C in N 2 ambient. The Hf 0.55Al 0.45O x film had an amorphous structure but Ga diffusion into Hf 0.55Al 0.45O x film was observed after PDA. The k-value of the Hf 0.55Al 0.45O x film was 17.2, which was larger than that of HfSiO x (13.5). The Hf 0.55Al 0.45O x also showed superior electrical properties such as a minimal flatband voltage (V fb) hysteresis ( +10 mV) and a relatively small V fb shift ( -0.95 V), as well as a low interface state density ( 1 1011 cm-2eV-1 at E c-E=0.25 eV), and a high breakdown electric field (8.6 MVcm-1). Based on these experimental data and previous our research of HfO 2 and HfSiO x films, we concluded the HfSiO x and HfAlO x had candidate materials as gate insulator for GaN power device.
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U2 - 10.1149/10404.0113ecst
DO - 10.1149/10404.0113ecst
M3 - Conference contribution
AN - SCOPUS:85116862014
T3 - ECS Transactions
SP - 113
EP - 120
BT - 240th ECS Meeting - Semiconductor Process Integration 12
PB - IOP Publishing Ltd.
T2 - 240th ECS Meeting
Y2 - 10 October 2021 through 14 October 2021
ER -