Initial stage of SiC growth on Si(100) surface at sample temperatures between 600 and 900 °C was studied using XPS (X-ray photoelectron spectroscopy), RHEED (reflection high energy electron diffraction), and SEM (scanning electron microscopy). Growth rate of silicon carbide film, and surface structure and morphology during the reaction were observed.
|Number of pages||4|
|Journal||Materials Science Forum|
|Issue number||pt 1|
|Publication status||Published - 1998|
|Event||Proceedings of the 1997 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, ICSCIII. Part 1 (of 2) - Stockholm, Sweden|
Duration: 1997 Sept 30 → …