TY - JOUR
T1 - Study of initial stage of SiC growth on Si(100) surface by XPS, RHEED and SEM
AU - Takaoka, T.
AU - Saito, H.
AU - Igari, Y.
AU - Kusunoki, I.
PY - 1998
Y1 - 1998
N2 - Initial stage of SiC growth on Si(100) surface at sample temperatures between 600 and 900 °C was studied using XPS (X-ray photoelectron spectroscopy), RHEED (reflection high energy electron diffraction), and SEM (scanning electron microscopy). Growth rate of silicon carbide film, and surface structure and morphology during the reaction were observed.
AB - Initial stage of SiC growth on Si(100) surface at sample temperatures between 600 and 900 °C was studied using XPS (X-ray photoelectron spectroscopy), RHEED (reflection high energy electron diffraction), and SEM (scanning electron microscopy). Growth rate of silicon carbide film, and surface structure and morphology during the reaction were observed.
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U2 - 10.4028/www.scientific.net/msf.264-268.203
DO - 10.4028/www.scientific.net/msf.264-268.203
M3 - Conference article
AN - SCOPUS:17144456095
SN - 0255-5476
VL - 264-268
SP - 203
EP - 206
JO - Materials Science Forum
JF - Materials Science Forum
IS - pt 1
T2 - Proceedings of the 1997 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, ICSCIII. Part 1 (of 2)
Y2 - 30 September 1997
ER -