TY - GEN
T1 - Study of long-term-retention characteristics and wall behavior of nano-inverted domains on congruent single-crystal LiTaO3 based on wall energy
AU - Odagawa, Nozomi
AU - Cho, Yasuo
PY - 2007/12/1
Y1 - 2007/12/1
N2 - To investigate the long-term retention characteristics of a ferroelectric-data-storage system, 80-nm-thick congruent LiTaO3 plates with inverted-domain dot arrays composed of 100-nm-φ dots were baked at 220, 250, 280 and 300°C. After heat treatment over a range of different time intervals, the dots shrank. From the change in the dot radius data, the activation energy (Ea) and frequency factor ( α ), parameters of the Arrhenius equation, were determined to be Ea = 0.76 eV, α= 2.21 × 105. From these parameter we can predict competitive retention characteristics compared with general memory devices. The phenomenon of dot shrinking can be explained from the energy transition of the system based on wall energy.
AB - To investigate the long-term retention characteristics of a ferroelectric-data-storage system, 80-nm-thick congruent LiTaO3 plates with inverted-domain dot arrays composed of 100-nm-φ dots were baked at 220, 250, 280 and 300°C. After heat treatment over a range of different time intervals, the dots shrank. From the change in the dot radius data, the activation energy (Ea) and frequency factor ( α ), parameters of the Arrhenius equation, were determined to be Ea = 0.76 eV, α= 2.21 × 105. From these parameter we can predict competitive retention characteristics compared with general memory devices. The phenomenon of dot shrinking can be explained from the energy transition of the system based on wall energy.
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U2 - 10.1109/ISAF.2007.4393257
DO - 10.1109/ISAF.2007.4393257
M3 - Conference contribution
AN - SCOPUS:51349131549
SN - 1424413338
SN - 9781424413331
T3 - IEEE International Symposium on Applications of Ferroelectrics
SP - 333
EP - 335
BT - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
T2 - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Y2 - 27 May 2007 through 31 May 2007
ER -