study of organic material FETs by combined static and noise measurements

Xu Yong; Takeo Minari; Kazuhito Tsukagoshi; Karlheinz Bock; Mooness Fadlallah; Gerard Ghibaudo; J. A. Chroboczek

doi:10.1063/1.3140420

study of organic material FETs by combined static and noise measurements

Xu Yong, Takeo Minari, Kazuhito Tsukagoshi, Karlheinz Bock, Mooness Fadlallah, Gerard Ghibaudo, J. A. Chroboczek

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We studied low frequency power spectral density (PSD) of drain current, I_d, fluctuations in organic materials field effect transistors, (OMFETs), with pentacene and polytriarylamine channels and analyzed the data using parameters extracted from I_d(V_g) characteristics, following a procedure developed for Si MOSFETs. We found that PSD spectra (i) vary as 1/f, (ii) show I_d^a ,with α≈2, amplitude variation, and (iii) scale with the gate surface. That provides some elements for constructing a model for noise generation in OMFETs and for normalization of PSD data. We show that normalized noise amplitude in OMFETs can be up to 10³ times higher than in their Si counterparts.

Original language	English
Title of host publication	Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009
Pages	163-166
Number of pages	4
DOIs	https://doi.org/10.1063/1.3140420
Publication status	Published - 2009
Externally published	Yes
Event	20th International Conference on Noise and Fluctuations, ICNF 2009 - Pisa, Italy Duration: 2009 Jun 14 → 2009 Jun 19

Publication series

Name	AIP Conference Proceedings
Volume	1129
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	20th International Conference on Noise and Fluctuations, ICNF 2009
Country/Territory	Italy
City	Pisa
Period	09/6/14 → 09/6/19

Keywords

Conducting polymers
Electrical noise
Hopping
Molecular electron devices
Polaron

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3140420

Cite this

Yong, X, Minari, T, Tsukagoshi, K, Bock, K, Fadlallah, M, Ghibaudo, G & Chroboczek, JA 2009, study of organic material FETs by combined static and noise measurements. in Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009. AIP Conference Proceedings, vol. 1129, pp. 163-166, 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 09/6/14. https://doi.org/10.1063/1.3140420

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title = "study of organic material FETs by combined static and noise measurements",

abstract = "We studied low frequency power spectral density (PSD) of drain current, Id, fluctuations in organic materials field effect transistors, (OMFETs), with pentacene and polytriarylamine channels and analyzed the data using parameters extracted from Id(Vg) characteristics, following a procedure developed for Si MOSFETs. We found that PSD spectra (i) vary as 1/f, (ii) show Ida ,with α≈2, amplitude variation, and (iii) scale with the gate surface. That provides some elements for constructing a model for noise generation in OMFETs and for normalization of PSD data. We show that normalized noise amplitude in OMFETs can be up to 103 times higher than in their Si counterparts.",

keywords = "Conducting polymers, Electrical noise, Hopping, Molecular electron devices, Polaron",

author = "Xu Yong and Takeo Minari and Kazuhito Tsukagoshi and Karlheinz Bock and Mooness Fadlallah and Gerard Ghibaudo and Chroboczek, {J. A.}",

year = "2009",

doi = "10.1063/1.3140420",

language = "English",

isbn = "9780735406650",

series = "AIP Conference Proceedings",

pages = "163--166",

booktitle = "Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009",

note = "20th International Conference on Noise and Fluctuations, ICNF 2009 ; Conference date: 14-06-2009 Through 19-06-2009",

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TY - GEN

T1 - study of organic material FETs by combined static and noise measurements

AU - Yong, Xu

AU - Minari, Takeo

AU - Tsukagoshi, Kazuhito

AU - Bock, Karlheinz

AU - Fadlallah, Mooness

AU - Ghibaudo, Gerard

AU - Chroboczek, J. A.

PY - 2009

Y1 - 2009

N2 - We studied low frequency power spectral density (PSD) of drain current, Id, fluctuations in organic materials field effect transistors, (OMFETs), with pentacene and polytriarylamine channels and analyzed the data using parameters extracted from Id(Vg) characteristics, following a procedure developed for Si MOSFETs. We found that PSD spectra (i) vary as 1/f, (ii) show Ida ,with α≈2, amplitude variation, and (iii) scale with the gate surface. That provides some elements for constructing a model for noise generation in OMFETs and for normalization of PSD data. We show that normalized noise amplitude in OMFETs can be up to 103 times higher than in their Si counterparts.

AB - We studied low frequency power spectral density (PSD) of drain current, Id, fluctuations in organic materials field effect transistors, (OMFETs), with pentacene and polytriarylamine channels and analyzed the data using parameters extracted from Id(Vg) characteristics, following a procedure developed for Si MOSFETs. We found that PSD spectra (i) vary as 1/f, (ii) show Ida ,with α≈2, amplitude variation, and (iii) scale with the gate surface. That provides some elements for constructing a model for noise generation in OMFETs and for normalization of PSD data. We show that normalized noise amplitude in OMFETs can be up to 103 times higher than in their Si counterparts.

KW - Conducting polymers

KW - Electrical noise

KW - Hopping

KW - Molecular electron devices

KW - Polaron

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DO - 10.1063/1.3140420

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T3 - AIP Conference Proceedings

SP - 163

EP - 166

BT - Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009

T2 - 20th International Conference on Noise and Fluctuations, ICNF 2009

Y2 - 14 June 2009 through 19 June 2009

ER -

study of organic material FETs by combined static and noise measurements

Abstract

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Keywords

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