Study of proton-conducting oxides by artificial modulation of dopant distribution

D. Hondo; T. Tsurui; N. Kuwata; N. Sata; F. Iguchi; H. Yugami

doi:10.1016/j.ssi.2007.02.020

Study of proton-conducting oxides by artificial modulation of dopant distribution

D. Hondo, T. Tsurui, N. Kuwata, N. Sata, F. Iguchi, H. Yugami

ENG - Mechanical Systems Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Artificial lattices are synthesized by alternate deposition of the SrZrO₃ (SZO) and the Y₂O₃ (SZO/Y artificial lattice) by Pulsed Laser Deposition (PLD) process to investigate the role of dopant cations in the proton migration. The XRD analysis of SZO/Y artificial lattices show that they are highly oriented in [001] direction epitaxially both on STO(001) and MgO(001) substrates similarly like SZO thin films. The HREM cross sectional views of SZO/Y artificial lattices show that the interface of the SZO layer and Y layer is very flat and the SZO can grow epitaxially even when Y layers are inserted. From the electric conductivity measurements, the main carrier of the SZO/Y artificial lattice is found to be proton.

Original language	English
Pages (from-to)	685-690
Number of pages	6
Journal	Solid State Ionics
Volume	178
Issue number	7-10
DOIs	https://doi.org/10.1016/j.ssi.2007.02.020
Publication status	Published - 2007 Apr

Keywords

Dopant distribution
Proton conductor
Pulsed laser deposition

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/j.ssi.2007.02.020

Cite this

@article{a38aa978a594483e8cad6d14794957c1,

title = "Study of proton-conducting oxides by artificial modulation of dopant distribution",

abstract = "Artificial lattices are synthesized by alternate deposition of the SrZrO3 (SZO) and the Y2O3 (SZO/Y artificial lattice) by Pulsed Laser Deposition (PLD) process to investigate the role of dopant cations in the proton migration. The XRD analysis of SZO/Y artificial lattices show that they are highly oriented in [001] direction epitaxially both on STO(001) and MgO(001) substrates similarly like SZO thin films. The HREM cross sectional views of SZO/Y artificial lattices show that the interface of the SZO layer and Y layer is very flat and the SZO can grow epitaxially even when Y layers are inserted. From the electric conductivity measurements, the main carrier of the SZO/Y artificial lattice is found to be proton.",

keywords = "Dopant distribution, Proton conductor, Pulsed laser deposition",

author = "D. Hondo and T. Tsurui and N. Kuwata and N. Sata and F. Iguchi and H. Yugami",

year = "2007",

month = apr,

doi = "10.1016/j.ssi.2007.02.020",

language = "English",

volume = "178",

pages = "685--690",

journal = "Solid State Ionics",

issn = "0167-2738",

publisher = "Elsevier",

number = "7-10",

}

TY - JOUR

T1 - Study of proton-conducting oxides by artificial modulation of dopant distribution

AU - Hondo, D.

AU - Tsurui, T.

AU - Kuwata, N.

AU - Sata, N.

AU - Iguchi, F.

AU - Yugami, H.

PY - 2007/4

Y1 - 2007/4

N2 - Artificial lattices are synthesized by alternate deposition of the SrZrO3 (SZO) and the Y2O3 (SZO/Y artificial lattice) by Pulsed Laser Deposition (PLD) process to investigate the role of dopant cations in the proton migration. The XRD analysis of SZO/Y artificial lattices show that they are highly oriented in [001] direction epitaxially both on STO(001) and MgO(001) substrates similarly like SZO thin films. The HREM cross sectional views of SZO/Y artificial lattices show that the interface of the SZO layer and Y layer is very flat and the SZO can grow epitaxially even when Y layers are inserted. From the electric conductivity measurements, the main carrier of the SZO/Y artificial lattice is found to be proton.

AB - Artificial lattices are synthesized by alternate deposition of the SrZrO3 (SZO) and the Y2O3 (SZO/Y artificial lattice) by Pulsed Laser Deposition (PLD) process to investigate the role of dopant cations in the proton migration. The XRD analysis of SZO/Y artificial lattices show that they are highly oriented in [001] direction epitaxially both on STO(001) and MgO(001) substrates similarly like SZO thin films. The HREM cross sectional views of SZO/Y artificial lattices show that the interface of the SZO layer and Y layer is very flat and the SZO can grow epitaxially even when Y layers are inserted. From the electric conductivity measurements, the main carrier of the SZO/Y artificial lattice is found to be proton.

KW - Dopant distribution

KW - Proton conductor

KW - Pulsed laser deposition

UR - http://www.scopus.com/inward/record.url?scp=34247540374&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247540374&partnerID=8YFLogxK

U2 - 10.1016/j.ssi.2007.02.020

DO - 10.1016/j.ssi.2007.02.020

M3 - Article

AN - SCOPUS:34247540374

SN - 0167-2738

VL - 178

SP - 685

EP - 690

JO - Solid State Ionics

JF - Solid State Ionics

IS - 7-10

ER -

Study of proton-conducting oxides by artificial modulation of dopant distribution

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this