Study of strain sensor using FeSiB magnetostrictive thin film

Yasuaki Suwa, Shigeto Agatsuma, Shuichiro Hashi, Kazushi Ishiyama

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


We examined the strain sensor using the inverse magnetostriction effect to obtain high sensitivity. Since the sensor is composed of a conductive layer sandwiched between two magnetostrictive films, the impedance of the sensor is low compared with the former works. Therefore, sensitivity of the sensor can be significantly improved due to the increase of the impedance change ratio. The sensor using molybdenum as the conductive layer exhibited higher sensitivity with a large impedance change ratio caused by the anisotropy induced to the width direction of the magnetostrictive films. In this study, for the sensor sample whose size is 0.5 mm in width and 2 μm in thickness, we could obtain the highest sensitivity of 18 000.

Original languageEnglish
Article number5393234
Pages (from-to)666-669
Number of pages4
JournalIEEE Transactions on Magnetics
Issue number2
Publication statusPublished - 2010 Feb


  • Conductive layer
  • Inverse magnetostriction effect
  • Strain sensor
  • Thermal expansion


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