Study of structure, magnetic and electrical properties of CO ₂MnSi heusler alloy thin films onto n-Si substrates

The structural, magnetic and electrical properties of Co₂MnSi thin films grown onto n-doped Si(110) and n-Si(100) substrates were studied. The structure and magnetic properties of Co₂ MnSi thin films were found to depend strongly on the annealing temperature ( Ta ). At Ta = 275-350°C, the Co₂MnSi films were of B2 phase with (100) texture and possessed magnetic moment on both substrates. The saturation magnetization (Ms) of Co ₂MnSi thin films was found maximum at Ta = 300°C. Chemical reaction might occur between Co₂MnSi and Si above Ta = 350°C which caused nearly zero Ms value. The current-voltage (I-V) characteristic of the Co₂MnSi thin films onto n-Si substrates was obtained linear suggesting the contacts were ohmic nature.