TY - JOUR
T1 - Study of the radiative and nonradiative processes of rare earth implanted semiconductors at low temperatures
AU - Kimura, T.
AU - Toda, H.
AU - Ishida, T.
AU - Isshiki, H.
AU - Saito, R.
N1 - Funding Information:
This work is partly supported by the grant in aid (no. 12450008) by the Ministry of Education, Science, Sports and Culture. The authors thank Prof. A. Polman of FOM Institute for his valuable discussion. We also thank Dr. H. Yasuhara and Dr. A. Sato of Fujikura Co. Ltd. for their support of this research.
PY - 2001/4
Y1 - 2001/4
N2 - Factors determining the low temperature fluorescent transition rate of the luminescence of rare earth implanted semiconductors are studied. Photocarrier induced Auger deexcitation is used to separate the radiative transition rate. The rate is from the fluorescent one for Er-, Er and Ne-, Er and O-implanted Si and Ho-implanted GaAs.
AB - Factors determining the low temperature fluorescent transition rate of the luminescence of rare earth implanted semiconductors are studied. Photocarrier induced Auger deexcitation is used to separate the radiative transition rate. The rate is from the fluorescent one for Er-, Er and Ne-, Er and O-implanted Si and Ho-implanted GaAs.
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U2 - 10.1016/S0168-583X(00)00568-1
DO - 10.1016/S0168-583X(00)00568-1
M3 - Conference article
AN - SCOPUS:0035302337
SN - 0168-583X
VL - 175-177
SP - 286
EP - 291
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
T2 - 12th International Conference on Ion Beam Modification of Materials
Y2 - 3 September 2000 through 8 September 2000
ER -