Study of the Si(111)7 × 7 surface by RHEED rocking curve analysis

Takashi Hanada; Shozo Ino; Hiroshi Daimon

doi:10.1016/0039-6028(94)91162-2

Study of the Si(111)7 × 7 surface by RHEED rocking curve analysis

Takashi Hanada, Shozo Ino, Hiroshi Daimon

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Several integer and fractional rocking curves of reflection high energy electron diffraction (RHEED) from the Si(111)7 × 7 surface have been measured using a SIT camera. Dynamical calculation of RHEED intensity and minimization of the reliability factor have been employed to analyze the surface-normal atomic coordinates of the dimer-adatom-stacking fault (DAS) model. The most important parameters to be in agreement with the experimental results are outward displacements of the adatoms and the rest-atoms and inward displacements of the second and third layer atoms just below an adatom. It is also demonstrated that some rocking curves are sensitive for stacking faults.

Original language	English
Pages (from-to)	143-154
Number of pages	12
Journal	Surface Science
Volume	313
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(94)91162-2
Publication status	Published - 1994 Jun 20
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(94)91162-2

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title = "Study of the Si(111)7 × 7 surface by RHEED rocking curve analysis",

abstract = "Several integer and fractional rocking curves of reflection high energy electron diffraction (RHEED) from the Si(111)7 × 7 surface have been measured using a SIT camera. Dynamical calculation of RHEED intensity and minimization of the reliability factor have been employed to analyze the surface-normal atomic coordinates of the dimer-adatom-stacking fault (DAS) model. The most important parameters to be in agreement with the experimental results are outward displacements of the adatoms and the rest-atoms and inward displacements of the second and third layer atoms just below an adatom. It is also demonstrated that some rocking curves are sensitive for stacking faults.",

author = "Takashi Hanada and Shozo Ino and Hiroshi Daimon",

year = "1994",

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T1 - Study of the Si(111)7 × 7 surface by RHEED rocking curve analysis

AU - Hanada, Takashi

AU - Ino, Shozo

AU - Daimon, Hiroshi

PY - 1994/6/20

Y1 - 1994/6/20

N2 - Several integer and fractional rocking curves of reflection high energy electron diffraction (RHEED) from the Si(111)7 × 7 surface have been measured using a SIT camera. Dynamical calculation of RHEED intensity and minimization of the reliability factor have been employed to analyze the surface-normal atomic coordinates of the dimer-adatom-stacking fault (DAS) model. The most important parameters to be in agreement with the experimental results are outward displacements of the adatoms and the rest-atoms and inward displacements of the second and third layer atoms just below an adatom. It is also demonstrated that some rocking curves are sensitive for stacking faults.

AB - Several integer and fractional rocking curves of reflection high energy electron diffraction (RHEED) from the Si(111)7 × 7 surface have been measured using a SIT camera. Dynamical calculation of RHEED intensity and minimization of the reliability factor have been employed to analyze the surface-normal atomic coordinates of the dimer-adatom-stacking fault (DAS) model. The most important parameters to be in agreement with the experimental results are outward displacements of the adatoms and the rest-atoms and inward displacements of the second and third layer atoms just below an adatom. It is also demonstrated that some rocking curves are sensitive for stacking faults.

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EP - 154

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Study of the Si(111)7 × 7 surface by RHEED rocking curve analysis

Abstract

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