Study of the Si(111)7 × 7 surface by RHEED rocking curve analysis

Takashi Hanada, Shozo Ino, Hiroshi Daimon

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


Several integer and fractional rocking curves of reflection high energy electron diffraction (RHEED) from the Si(111)7 × 7 surface have been measured using a SIT camera. Dynamical calculation of RHEED intensity and minimization of the reliability factor have been employed to analyze the surface-normal atomic coordinates of the dimer-adatom-stacking fault (DAS) model. The most important parameters to be in agreement with the experimental results are outward displacements of the adatoms and the rest-atoms and inward displacements of the second and third layer atoms just below an adatom. It is also demonstrated that some rocking curves are sensitive for stacking faults.

Original languageEnglish
Pages (from-to)143-154
Number of pages12
JournalSurface Science
Issue number1-2
Publication statusPublished - 1994 Jun 20
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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