TY - JOUR
T1 - Study of Vacuum-Assisted Spin Coating of Polymer Liner for High-Aspect-Ratio Through-Silicon-Via Applications
AU - Yan, Yangyang
AU - Ding, Yingtao
AU - Fukushima, Takafumi
AU - Lee, Kang Wook
AU - Koyanagi, Mitsumasa
N1 - Publisher Copyright:
© 2011-2012 IEEE.
PY - 2016/4
Y1 - 2016/4
N2 - This paper provides a new approach for the formation of polymer liner for low-$k$ high-aspect-ratio through-silicon-vias involved in via-last backside-via 3-D integration applications. The approach mentioned, referred to as vacuum-assisted spin coating technique in this paper, is formed by combining a conventional spin coating technique and a vacuum treatment. Silicon blind vias with a diameter of 6~ μ m} and an aspect ratio of ∼ 8 were conformably coated on their sidewall with polyimide liner with the minimum step coverage ∼ 30 % by this approach. Impacts of via geometric parameters and wafer sizes on step coverage were investigated. Electrical characteristics were evaluated with a trench capacitor structure of which the insulator layer was formed by the vacuum-assisted spin coating technique. The minimum capacitance density of 5.3 nF/cm2 and the leakage current density of ∼ 3 nA/cm2 at a biased voltage of 5 V were obtained. The proposed vacuum-assisted spin coating technique is a simple, feasible, and cost-effective approach for 3-D integration applications.
AB - This paper provides a new approach for the formation of polymer liner for low-$k$ high-aspect-ratio through-silicon-vias involved in via-last backside-via 3-D integration applications. The approach mentioned, referred to as vacuum-assisted spin coating technique in this paper, is formed by combining a conventional spin coating technique and a vacuum treatment. Silicon blind vias with a diameter of 6~ μ m} and an aspect ratio of ∼ 8 were conformably coated on their sidewall with polyimide liner with the minimum step coverage ∼ 30 % by this approach. Impacts of via geometric parameters and wafer sizes on step coverage were investigated. Electrical characteristics were evaluated with a trench capacitor structure of which the insulator layer was formed by the vacuum-assisted spin coating technique. The minimum capacitance density of 5.3 nF/cm2 and the leakage current density of ∼ 3 nA/cm2 at a biased voltage of 5 V were obtained. The proposed vacuum-assisted spin coating technique is a simple, feasible, and cost-effective approach for 3-D integration applications.
KW - 3-D integration
KW - backside-via integration
KW - polymer liner
KW - through-silicon-vias (TSVs)
KW - vacuum-assisted spin coating
KW - via-last.
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U2 - 10.1109/TCPMT.2016.2514365
DO - 10.1109/TCPMT.2016.2514365
M3 - Article
AN - SCOPUS:84957686478
SN - 2156-3950
VL - 6
SP - 501
EP - 509
JO - IEEE Transactions on Components, Packaging and Manufacturing Technology
JF - IEEE Transactions on Components, Packaging and Manufacturing Technology
IS - 4
M1 - 7397981
ER -