Study of VUV emission and γ-ray responses of Nd:BaF2 scintillaotor

Takayuki Yanagida, Noriaki Kawaguchi, Yuui Yokota, Sumito Ishidu, Kentaro Fukuda, Akira Yoshikawa, Jan Pejchal, Martin Nikl, Vladimir Babin, Hiroyuki Sekiya, Kei Kamada

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19 Citations (Scopus)


Nd3+ 1%, 5% and 10% doped BaF2 single crystals were grown by the micro-pulling down method. Photoluminescence properties, including excitation and emission spectra and luminescence decay were measured under synchrotron radiation excitation at the Superlumi station in HASYLAB at DESY (Hamburg, Germany). The Nd3+ related 5d-4f emission lines peaking around 180 nm, 230 nm, and 260 nm, identified as the 5d-4I j, 5d-4Fj, and 5d-2Gj transitions, were observed under 140-168 nm excitation. In photoluminescence decay under the 160 nm excitation, the dominant component decay time is about 12, 2.5 and 1.2 ns for Nd3+ 1%, 5% and 10% concentration, respectively. The decay time shortening is explained by the concentration quenching effect. Transmittance of Nd1% sample is about 80% for wavelengths above 185 nm. Finally, gamma-ray responses, non-proportionality and energy resolution of Nd1% sample were compared with the undoped BaF2 scintillator. The light yield of the Nd1%:BaF2 is about 93% of that of undoped BaF2. ©2009 Elsevier Ltd. All rights reserved.

Original languageEnglish
Pages (from-to)422-425
Number of pages4
JournalRadiation Measurements
Issue number3-6
Publication statusPublished - 2010 Mar


  • Energy resolution
  • Nd-doped BaF
  • Scintillation detector
  • Scintillation yield
  • Single crystal
  • VUV luminescence


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