Study on collective electron motion in Si-nano dot floating gate MOS capacitor

Masakazu Muraguchi; Yoko Sakurai; Yukihiro Takada; Shintaro Nomura; Kenji Shiraishi; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki; Yasuteru Shigeta; Tetsuo Endoh

doi:10.1587/transele.E94.C.730

Study on collective electron motion in Si-nano dot floating gate MOS capacitor

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh

ENG - Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the twodimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si- ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.

Original language	English
Pages (from-to)	730-736
Number of pages	7
Journal	IEICE Transactions on Electronics
Volume	E94-C
Issue number	5
DOIs	https://doi.org/10.1587/transele.E94.C.730
Publication status	Published - 2011 May

Keywords

Collective motion of electron
Electron dynamics
Si-nano dot
Si-nano dot type floating gate MOS capacitor
Tunneling
Two-dimensional electron gas

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10.1587/transele.E94.C.730

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title = "Study on collective electron motion in Si-nano dot floating gate MOS capacitor",

abstract = "We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the twodimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si- ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.",

keywords = "Collective motion of electron, Electron dynamics, Si-nano dot, Si-nano dot type floating gate MOS capacitor, Tunneling, Two-dimensional electron gas",

author = "Masakazu Muraguchi and Yoko Sakurai and Yukihiro Takada and Shintaro Nomura and Kenji Shiraishi and Mitsuhisa Ikeda and Katsunori Makihara and Seiichi Miyazaki and Yasuteru Shigeta and Tetsuo Endoh",

year = "2011",

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doi = "10.1587/transele.E94.C.730",

language = "English",

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AU - Muraguchi, Masakazu

AU - Sakurai, Yoko

AU - Takada, Yukihiro

AU - Nomura, Shintaro

AU - Shiraishi, Kenji

AU - Ikeda, Mitsuhisa

AU - Makihara, Katsunori

AU - Miyazaki, Seiichi

AU - Shigeta, Yasuteru

AU - Endoh, Tetsuo

PY - 2011/5

Y1 - 2011/5

N2 - We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the twodimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si- ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.

AB - We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the twodimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si- ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.

KW - Collective motion of electron

KW - Electron dynamics

KW - Si-nano dot

KW - Si-nano dot type floating gate MOS capacitor

KW - Tunneling

KW - Two-dimensional electron gas

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JF - IEICE Transactions on Electronics

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Study on collective electron motion in Si-nano dot floating gate MOS capacitor

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Keywords

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