We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the twodimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si- ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.
- Collective motion of electron
- Electron dynamics
- Si-nano dot
- Si-nano dot type floating gate MOS capacitor
- Two-dimensional electron gas