TY - JOUR
T1 - Study on crystal growth and luminescence properties of Pr-doped RE 2SiO5 (RE=Y, Lu)
AU - Novoselov, A.
AU - Ogino, H.
AU - Yoshikawa, A.
AU - Nikl, M.
AU - Pejchal, J.
AU - Mares, J. A.
AU - Beitlerova, A.
AU - D'Ambrosio, C.
AU - Fukuda, T.
N1 - Funding Information:
The authors thank Mr. Y. Shoji, Fukuda X’tal Laboratory Ltd., for big practical help with crystal growth, and Mr. Y. Murakami, IMR, Tohoku University, for his assistance with EPMA. This work was partially supported by the Ministry of Education, Culture, Sports, Science and Technology of Japan, Grant-in-Aid for Young Scientists (A), 15686001, 2003 (AY), the Industrial Technology Research Grant Program in 03A26014a from New Energy and Industrial Technology Development Organization of Japan (NEDO) and the Japan Society for the Promotion of Science (JSPS), the Postdoctoral Fellowship for Foreign Researches Program (AN). Partial support of Czech MSMT KONTAKT 1P2004ME716 project is gratefully acknowledged.
PY - 2006/1/25
Y1 - 2006/1/25
N2 - Using the micro-pulling-down method, Pr3+-doped Y 2SiO5 and Lu2SiO5 single crystals have been grown and their optical and luminescence properties have been investigated. The position of the lowest 5d absorption level was found at about 246 nm and in both materials an intense and fast 5d-4f luminescence peaking round 275 nm with a shoulder round 315 nm has been observed at room temperature. Photoluminescence decay time at room temperature was obtained to be of about 17 and 6 ns in the leading decay component in Pr3+-doped Y 2SiO5 and Lu2SiO5, respectively. Shorter decay time of Pr3+-doped Lu2SiO5 was explained by the ionization of the lowest 5d1 state of Pr 3+.
AB - Using the micro-pulling-down method, Pr3+-doped Y 2SiO5 and Lu2SiO5 single crystals have been grown and their optical and luminescence properties have been investigated. The position of the lowest 5d absorption level was found at about 246 nm and in both materials an intense and fast 5d-4f luminescence peaking round 275 nm with a shoulder round 315 nm has been observed at room temperature. Photoluminescence decay time at room temperature was obtained to be of about 17 and 6 ns in the leading decay component in Pr3+-doped Y 2SiO5 and Lu2SiO5, respectively. Shorter decay time of Pr3+-doped Lu2SiO5 was explained by the ionization of the lowest 5d1 state of Pr 3+.
KW - A1. Pr-doping
KW - A2. Micro-pulling-down method
KW - B1. Oxides
KW - B2. Scintillator materials
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U2 - 10.1016/j.jcrysgro.2005.11.028
DO - 10.1016/j.jcrysgro.2005.11.028
M3 - Article
AN - SCOPUS:30344463312
SN - 0022-0248
VL - 287
SP - 309
EP - 312
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2
ER -