Study on crystal growth and luminescence properties of Pr-doped RE 2SiO5 (RE=Y, Lu)

A. Novoselov, H. Ogino, A. Yoshikawa, M. Nikl, J. Pejchal, J. A. Mares, A. Beitlerova, C. D'Ambrosio, T. Fukuda

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14 Citations (Scopus)


Using the micro-pulling-down method, Pr3+-doped Y 2SiO5 and Lu2SiO5 single crystals have been grown and their optical and luminescence properties have been investigated. The position of the lowest 5d absorption level was found at about 246 nm and in both materials an intense and fast 5d-4f luminescence peaking round 275 nm with a shoulder round 315 nm has been observed at room temperature. Photoluminescence decay time at room temperature was obtained to be of about 17 and 6 ns in the leading decay component in Pr3+-doped Y 2SiO5 and Lu2SiO5, respectively. Shorter decay time of Pr3+-doped Lu2SiO5 was explained by the ionization of the lowest 5d1 state of Pr 3+.

Original languageEnglish
Pages (from-to)309-312
Number of pages4
JournalJournal of Crystal Growth
Issue number2
Publication statusPublished - 2006 Jan 25


  • A1. Pr-doping
  • A2. Micro-pulling-down method
  • B1. Oxides
  • B2. Scintillator materials


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