Study on dephasing dynamics of Exciton Fine Structure in GaN

T. Ishiguro, Y. Toda, S. Adachi, S. F. Chichibu

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1 Citation (Scopus)


We report on the dephasing dynamics of exciton fine structure (EFS) in a free standing GaN. The EFS was observed and studied by utilizing a four-wave-mixing (FWM) spectroscopy. In the cleavage plane of wurtzite GaN, we can excite the B-exciton fine structure, whose z -polarized state is energetically well separated from the other in-plane polarized exciton states. Due to the large spin exchange interaction in GaN, an energy shift of in-plane polarized fine structure was also observed. Since the each component of EFS is highly polarized, the polarization-dependent FWM successfully resolves their dephasing dynamics. The results show a significant difference in the dephasing time between EFS, suggesting that anisotropic exchange interaction is effective as reported in our previous work using a GaN film on a -plane sapphire.

Original languageEnglish
Pages (from-to)S719-S722
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue numberSUPPL. 2
Publication statusPublished - 2009 Jul


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