TY - JOUR
T1 - Study on diffusion characteristics of the excited carriers in electron-hole plasma in GaAs using high-energy ions
AU - Koshimizu, M.
AU - Asai, K.
AU - Shibata, H.
PY - 2001/12
Y1 - 2001/12
N2 - We measured the luminescence spectrum of GaAs induced by 1.0 MeV proton bombardment, and found luminescence peaks due to the spontaneous luminescence of electron-hole plasma. Based on the spectral shape analysis, we obtained the carrier density and temperature when radiative recombination occurs. The carrier density is consistent with that obtained from the diffusion analysis of the excited carriers. These results indicate that high-energy ions are a valuable tool for analyzing the diffusion characteristics of carriers in a highly excited region.
AB - We measured the luminescence spectrum of GaAs induced by 1.0 MeV proton bombardment, and found luminescence peaks due to the spontaneous luminescence of electron-hole plasma. Based on the spectral shape analysis, we obtained the carrier density and temperature when radiative recombination occurs. The carrier density is consistent with that obtained from the diffusion analysis of the excited carriers. These results indicate that high-energy ions are a valuable tool for analyzing the diffusion characteristics of carriers in a highly excited region.
KW - Diffusion
KW - Electron-hole plasma
KW - GaAs
KW - High-energy ion
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U2 - 10.1016/S0022-2313(01)00403-3
DO - 10.1016/S0022-2313(01)00403-3
M3 - Article
AN - SCOPUS:0035698117
SN - 0022-2313
VL - 94-95
SP - 407
EP - 411
JO - Journal of Luminescence
JF - Journal of Luminescence
ER -