Study on impurity distribution dependence of electron-dynamics in vertical MOSFET

We have studied the transport property of the Vertical MOSFET (V-MOSFET) with an impurity from the viewpoint of quantum electron dynamics. In order to obtain the position dependence of impurity for the electron transmission property through the channel of the VMOSFET, we solve the time-dependent Shrödinger equation in real space mesh techniqueWe reveal that the impurity in the source edge can assist the electron transmission from the source to drain working as a wave splitter. In addition, we also reveal the effect of an impurity in the surface of pillar is limited because of its dimensionality. Furthermore, we obtained that the electron injection from the source to the channel becomes difficult due to the energy difference between the subbands of the source and the channel. These results enable us to obtain the guiding principle to design the V-MOSFET in the 10 nm pillar. The results enable us to obtain the guiding principle to design the V-MOSFET beyond 20 nm design rule.