Study on influence of O2 concentration in wafer cleaning ambient for smoothness of silicon (110) surface appearing at sidewall of three-dimensional transistors

Tomoyuki Suwa; Akinobu Teramoto; Yasuyuki Shirai; Takenobu Matsuo; Nobutaka Mizutani; Shigetoshi Sugawa

doi:10.1149/09703.0023ecst

Study on influence of O₂ concentration in wafer cleaning ambient for smoothness of silicon (110) surface appearing at sidewall of three-dimensional transistors

Tomoyuki Suwa, Akinobu Teramoto, Yasuyuki Shirai, Takenobu Matsuo, Nobutaka Mizutani, Shigetoshi Sugawa

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We investigated the influence of O₂ concentration in ultra pure water (UPW) on the Si(110) surface roughness during the immersion of Si into UPW. The suppressing of O₂ concentration in UPW is very effective to suppress the increase of microroughness of Si(110) surface. The O₂ concentration in UPW can be controlled by the ambient O₂ concentration. Si(110) surface cannot be roughened when the O₂ concentration is suppressed to less than 100 ppm in ambient (4 ppb in UPW) and the immersion time is less than 1 hour. It can be expected that the Si(110) surface flatness is maintained, and this surface is mainly used for the channel of FinFET. Furthermore, we demonstrated that the O₂ concentration in a prototype 200-mm single-wafer cleaning chamber can be decreased to less than 100 ppm within 1 minute by an N₂ purge of 200 l/min.

Original language	English
Title of host publication	237th ECS Meeting
Subtitle of host publication	Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10
Editors	H. Jagannathan, K. Kakushima, P. J. Timans, E. Gusev, Z. Karim, S. De Gendt, D. Misra, Y. S. Obeng, F. Roo
Publisher	IOP Publishing Ltd.
Pages	23-29
Number of pages	7
Edition	3
ISBN (Electronic)	9781607688914
DOIs	https://doi.org/10.1149/09703.0023ecst
Publication status	Published - 2020 Apr 1
Event	237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020 - Montreal, Canada Duration: 2020 May 10 → 2020 May 14

Publication series

Name	ECS Transactions
Number	3
Volume	97
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020
Country/Territory	Canada
City	Montreal
Period	20/5/10 → 20/5/14

Access to Document

10.1149/09703.0023ecst

Cite this

Suwa, T., Teramoto, A., Shirai, Y., Matsuo, T., Mizutani, N., & Sugawa, S. (2020). Study on influence of O₂ concentration in wafer cleaning ambient for smoothness of silicon (110) surface appearing at sidewall of three-dimensional transistors. In H. Jagannathan, K. Kakushima, P. J. Timans, E. Gusev, Z. Karim, S. De Gendt, D. Misra, Y. S. Obeng, & F. Roo (Eds.), 237th ECS Meeting: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10 (3 ed., pp. 23-29). (ECS Transactions; Vol. 97, No. 3). IOP Publishing Ltd.. https://doi.org/10.1149/09703.0023ecst

Suwa, Tomoyuki ; Teramoto, Akinobu ; Shirai, Yasuyuki et al. / Study on influence of O₂ concentration in wafer cleaning ambient for smoothness of silicon (110) surface appearing at sidewall of three-dimensional transistors. 237th ECS Meeting: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10. editor / H. Jagannathan ; K. Kakushima ; P. J. Timans ; E. Gusev ; Z. Karim ; S. De Gendt ; D. Misra ; Y. S. Obeng ; F. Roo. 3. ed. IOP Publishing Ltd., 2020. pp. 23-29 (ECS Transactions; 3).

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abstract = "We investigated the influence of O2 concentration in ultra pure water (UPW) on the Si(110) surface roughness during the immersion of Si into UPW. The suppressing of O2 concentration in UPW is very effective to suppress the increase of microroughness of Si(110) surface. The O2 concentration in UPW can be controlled by the ambient O2 concentration. Si(110) surface cannot be roughened when the O2 concentration is suppressed to less than 100 ppm in ambient (4 ppb in UPW) and the immersion time is less than 1 hour. It can be expected that the Si(110) surface flatness is maintained, and this surface is mainly used for the channel of FinFET. Furthermore, we demonstrated that the O2 concentration in a prototype 200-mm single-wafer cleaning chamber can be decreased to less than 100 ppm within 1 minute by an N2 purge of 200 l/min.",

author = "Tomoyuki Suwa and Akinobu Teramoto and Yasuyuki Shirai and Takenobu Matsuo and Nobutaka Mizutani and Shigetoshi Sugawa",

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Suwa, T, Teramoto, A, Shirai, Y, Matsuo, T, Mizutani, N & Sugawa, S 2020, Study on influence of O₂ concentration in wafer cleaning ambient for smoothness of silicon (110) surface appearing at sidewall of three-dimensional transistors. in H Jagannathan, K Kakushima, PJ Timans, E Gusev, Z Karim, S De Gendt, D Misra, YS Obeng & F Roo (eds), 237th ECS Meeting: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10. 3 edn, ECS Transactions, no. 3, vol. 97, IOP Publishing Ltd., pp. 23-29, 237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020, Montreal, Canada, 20/5/10. https://doi.org/10.1149/09703.0023ecst

Study on influence of O₂ concentration in wafer cleaning ambient for smoothness of silicon (110) surface appearing at sidewall of three-dimensional transistors. / Suwa, Tomoyuki; Teramoto, Akinobu; Shirai, Yasuyuki et al.
237th ECS Meeting: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10. ed. / H. Jagannathan; K. Kakushima; P. J. Timans; E. Gusev; Z. Karim; S. De Gendt; D. Misra; Y. S. Obeng; F. Roo. 3. ed. IOP Publishing Ltd., 2020. p. 23-29 (ECS Transactions; Vol. 97, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Teramoto, Akinobu

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AU - Mizutani, Nobutaka

AU - Sugawa, Shigetoshi

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Suwa T, Teramoto A, Shirai Y, Matsuo T, Mizutani N, Sugawa S. Study on influence of O₂ concentration in wafer cleaning ambient for smoothness of silicon (110) surface appearing at sidewall of three-dimensional transistors. In Jagannathan H, Kakushima K, Timans PJ, Gusev E, Karim Z, De Gendt S, Misra D, Obeng YS, Roo F, editors, 237th ECS Meeting: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10. 3 ed. IOP Publishing Ltd. 2020. p. 23-29. (ECS Transactions; 3). doi: 10.1149/09703.0023ecst