Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy

Satoshi Toyoda; Haruhiko Takahashi; Hiroshi Kumigashira; Masaharu Oshima; Dong Ick Lee; Shiyu Sun; Zhi Liu; Yun Sun; Piero A. Pianetta; Itaru Oshiyama; Kaori Tai; Seiichi Fukuda

doi:10.1063/1.3212979

Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy

Satoshi Toyoda, Haruhiko Takahashi, Hiroshi Kumigashira, Masaharu Oshima, Dong Ick Lee, Shiyu Sun, Zhi Liu, Yun Sun, Piero A. Pianetta, Itaru Oshiyama, Kaori Tai, Seiichi Fukuda

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We have investigated the effect of HfO2 layer thickness on crystallization in thin HfO2 films using photoemission spectroscopy and x-ray absorption spectroscopy (XAS). O K -edge XAS spectra depending on annealing temperature indicate that crystallization in thin HfO2 films is suppressed upon annealing for thin HfO2 film, which in turn has a beneficial effect on the performance of devices. The annealing-temperature dependence of the depth profile of HfO2 films suggests that diffusion of Si atoms into the HfO2 layer plays only a minor role in the suppression of crystallization, indicating that HfO2 films can restrain a decrease in dielectric constant.

Original language	English
Article number	064103
Journal	Journal of Applied Physics
Volume	106
Issue number	6
DOIs	https://doi.org/10.1063/1.3212979
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{f27944e7a8914834982ce67c8182191f,

title = "Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy",

abstract = "We have investigated the effect of HfO2 layer thickness on crystallization in thin HfO2 films using photoemission spectroscopy and x-ray absorption spectroscopy (XAS). O K -edge XAS spectra depending on annealing temperature indicate that crystallization in thin HfO2 films is suppressed upon annealing for thin HfO2 film, which in turn has a beneficial effect on the performance of devices. The annealing-temperature dependence of the depth profile of HfO2 films suggests that diffusion of Si atoms into the HfO2 layer plays only a minor role in the suppression of crystallization, indicating that HfO2 films can restrain a decrease in dielectric constant.",

author = "Satoshi Toyoda and Haruhiko Takahashi and Hiroshi Kumigashira and Masaharu Oshima and Lee, {Dong Ick} and Shiyu Sun and Zhi Liu and Yun Sun and Pianetta, {Piero A.} and Itaru Oshiyama and Kaori Tai and Seiichi Fukuda",

note = "Funding Information: Parts of this research were carried out at the SSRL, a National User Facility operated by Stanford University on behalf of the US Department of Energy, Office of Basic Energy Sciences (DOE Contract No. DE-AC02-76-SFO0515). One of the authors (S. T.) acknowledges support from the Japan Society for the Promotion of Science for Young Scientists.",

year = "2009",

doi = "10.1063/1.3212979",

language = "English",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy

AU - Toyoda, Satoshi

AU - Takahashi, Haruhiko

AU - Kumigashira, Hiroshi

AU - Oshima, Masaharu

AU - Lee, Dong Ick

AU - Sun, Shiyu

AU - Liu, Zhi

AU - Sun, Yun

AU - Pianetta, Piero A.

AU - Oshiyama, Itaru

AU - Tai, Kaori

AU - Fukuda, Seiichi

N1 - Funding Information: Parts of this research were carried out at the SSRL, a National User Facility operated by Stanford University on behalf of the US Department of Energy, Office of Basic Energy Sciences (DOE Contract No. DE-AC02-76-SFO0515). One of the authors (S. T.) acknowledges support from the Japan Society for the Promotion of Science for Young Scientists.

PY - 2009

Y1 - 2009

N2 - We have investigated the effect of HfO2 layer thickness on crystallization in thin HfO2 films using photoemission spectroscopy and x-ray absorption spectroscopy (XAS). O K -edge XAS spectra depending on annealing temperature indicate that crystallization in thin HfO2 films is suppressed upon annealing for thin HfO2 film, which in turn has a beneficial effect on the performance of devices. The annealing-temperature dependence of the depth profile of HfO2 films suggests that diffusion of Si atoms into the HfO2 layer plays only a minor role in the suppression of crystallization, indicating that HfO2 films can restrain a decrease in dielectric constant.

AB - We have investigated the effect of HfO2 layer thickness on crystallization in thin HfO2 films using photoemission spectroscopy and x-ray absorption spectroscopy (XAS). O K -edge XAS spectra depending on annealing temperature indicate that crystallization in thin HfO2 films is suppressed upon annealing for thin HfO2 film, which in turn has a beneficial effect on the performance of devices. The annealing-temperature dependence of the depth profile of HfO2 films suggests that diffusion of Si atoms into the HfO2 layer plays only a minor role in the suppression of crystallization, indicating that HfO2 films can restrain a decrease in dielectric constant.

UR - http://www.scopus.com/inward/record.url?scp=70349642105&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349642105&partnerID=8YFLogxK

U2 - 10.1063/1.3212979

DO - 10.1063/1.3212979

M3 - Article

AN - SCOPUS:70349642105

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 064103

ER -

Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy

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