Voltage oscillation mechanism with an anomalous spike voltage during reverse recovery of a P-i-N diode has been studied, for the first time. The anomalous spike voltage starts to appear when the reverse bias VRB just becomes larger than the threshold reverse power supply voltage VRB(th). As the initial forward current density IF decreases below 20 A/cm2, VRB(th) becomes lower than the punch-through voltage VPT, since the excess carrier disappears before the depletion layer reaches the N+ cathode region during reverse recovery process. Furthermore, measurements will be also done to corroborate numerical results. Based upon these results, newly developed diode was successfully designed and fabricated in order to reduce the voltage oscillation.
|Number of pages
|Published - 1998
|Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98 - Kyoto, Jpn
Duration: 1998 Jun 3 → 1998 Jun 6
|Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98
|98/6/3 → 98/6/6