Sub-μm wide channels with surface potential compensated by focused Si ion beam implantation

Toshimasa Fujisawa; Tadashi Saku; Yoshiro Hirayama; Seigo Tarucha

doi:10.1063/1.109748

Sub-μm wide channels with surface potential compensated by focused Si ion beam implantation

Toshimasa Fujisawa, Tadashi Saku, Yoshiro Hirayama, Seigo Tarucha

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We propose and demonstrate a novel technique using focused Si ion beam implantation to produce high-quality mesoscopic channels. Low-energy Si implantation compensates the surface potential of a modulation-doped heterostructure that is designed to have no conductive channels at the heterointerface. The implantation forms a conductive channel separated from the damaged implanted region. The mobility of the channel is improved by decreasing the ion energy from 100 to 35 keV. Sub-μm to 5 μm wide channels fabricated by 35 keV Si⁺ ions show a mobility of 5.3×10⁵ cm²/V s and a ballistic length of 3.1 μm at 1.5 K.

Original language	English
Pages (from-to)	51-53
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	1
DOIs	https://doi.org/10.1063/1.109748
Publication status	Published - 1993

Access to Document

10.1063/1.109748

Cite this

@article{56d24eb3e4844725a8ef6df12ba23902,

title = "Sub-μm wide channels with surface potential compensated by focused Si ion beam implantation",

abstract = "We propose and demonstrate a novel technique using focused Si ion beam implantation to produce high-quality mesoscopic channels. Low-energy Si implantation compensates the surface potential of a modulation-doped heterostructure that is designed to have no conductive channels at the heterointerface. The implantation forms a conductive channel separated from the damaged implanted region. The mobility of the channel is improved by decreasing the ion energy from 100 to 35 keV. Sub-μm to 5 μm wide channels fabricated by 35 keV Si+ ions show a mobility of 5.3×105 cm2/V s and a ballistic length of 3.1 μm at 1.5 K.",

author = "Toshimasa Fujisawa and Tadashi Saku and Yoshiro Hirayama and Seigo Tarucha",

year = "1993",

doi = "10.1063/1.109748",

language = "English",

volume = "63",

pages = "51--53",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Sub-μm wide channels with surface potential compensated by focused Si ion beam implantation

AU - Fujisawa, Toshimasa

AU - Saku, Tadashi

AU - Hirayama, Yoshiro

AU - Tarucha, Seigo

PY - 1993

Y1 - 1993

N2 - We propose and demonstrate a novel technique using focused Si ion beam implantation to produce high-quality mesoscopic channels. Low-energy Si implantation compensates the surface potential of a modulation-doped heterostructure that is designed to have no conductive channels at the heterointerface. The implantation forms a conductive channel separated from the damaged implanted region. The mobility of the channel is improved by decreasing the ion energy from 100 to 35 keV. Sub-μm to 5 μm wide channels fabricated by 35 keV Si+ ions show a mobility of 5.3×105 cm2/V s and a ballistic length of 3.1 μm at 1.5 K.

AB - We propose and demonstrate a novel technique using focused Si ion beam implantation to produce high-quality mesoscopic channels. Low-energy Si implantation compensates the surface potential of a modulation-doped heterostructure that is designed to have no conductive channels at the heterointerface. The implantation forms a conductive channel separated from the damaged implanted region. The mobility of the channel is improved by decreasing the ion energy from 100 to 35 keV. Sub-μm to 5 μm wide channels fabricated by 35 keV Si+ ions show a mobility of 5.3×105 cm2/V s and a ballistic length of 3.1 μm at 1.5 K.

UR - http://www.scopus.com/inward/record.url?scp=0041464165&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041464165&partnerID=8YFLogxK

U2 - 10.1063/1.109748

DO - 10.1063/1.109748

M3 - Article

AN - SCOPUS:0041464165

SN - 0003-6951

VL - 63

SP - 51

EP - 53

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Sub-μm wide channels with surface potential compensated by focused Si ion beam implantation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this