Abstract
Extremely narrow spectral-linewidth characteristics in 1-5µm GaInAs/GaInAsP separate-confinement-heterostructure (SCH), quantum-well (QW), distributed-feedback, laser diodes (DFB LDs) are reported. Narrower linewidths were obtained in lasers with smaller numbers of quantum wells. Sub-MHz linewidth was achieved for the first time in single laser diodes.
Original language | English |
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Pages (from-to) | 356-357 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 25 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1989 Feb 16 |
Keywords
- LEDs
- Quantum optics
- Semiconductor laser