Sub-terahertz FET detector with self-assembled Sn-nanothreads

D. S. Ponomarev, D. V. Lavrukhin, A. E. Yachmenev, R. A. Khabibullin, I. E. Semenikhin, V. V. Vyurkov, K. V. Marem'yanin, V. I. Gavrilenko, M. Ryzhii, M. Shur, T. Otsuji, V. Ryzhii

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7 Citations (Scopus)


We report on the design, evaluation and fabrication of the sub-terahertz (sub-THz) detector using a GaAs gated field-effect transistor with a buried quasi-two-dimensional electron gas created by the self-assembled Sn-nanothreads (Sn-NTs) embedded into the GaAs channel. This GaAs-Sn-NTs detector efficiently detects a sub-THz radiation at cryogenic and room temperatures (CT and RT, respectively). Two possible detection mechanisms are the bolometric mechanism due to electron heating by the sub-THz radiation and the mechanism related to the rectification of the decayed plasmonic oscillations. We developed a classical self-consistent device model of the bolometric detection involving the Poisson equation and the electron density of states and estimated responsivity and noise-equivalent power of the detector. The measured I-V characteristics and the photoresponse to the incident sub-THz radiation at CT and RT are in reasonable agreement with our model. The detector demonstrates a better performance than semiconductor-based hot-electron bolometers and quantum-well/dot IR and THz photodetectors.

Original languageEnglish
Article number075102
JournalJournal Physics D: Applied Physics
Issue number7
Publication statusPublished - 2020


  • Field-effect transistor
  • Low-dimensional materials and physics
  • Molecular-beam epitaxy
  • Semiconductors
  • Terahertz radiation
  • Thz detector


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