TY - GEN
T1 - Substrate bonding at low temperature by using plasma activated porous gold
AU - Wang, Wei Shan
AU - Lin, Yu Ching
AU - Gessner, Thomas
AU - Esashi, Masayoshi
PY - 2012
Y1 - 2012
N2 - Porous gold with porosity in nanoscale which indicates a highly reactive surface has shown its potential for low temperature bonding. Recently, thermo-compression bonding between nanoporous gold (NPG) and gold film at 200°C has been reported. In this study, with plasma activation, silicon chips with Au film and nanoporous gold structure respectively bonded at room temperature is demonstrated. First, nanoporous gold is fabricated by electrodeposition of gold-tin alloy, followed by chemical dealloying where the Sn component is removed. Then, with Ar plasma treatment, two silicon chips, one side with sputtered Au film and the other with nanoporous gold, are bonded face to face in ambient air. Bonding temperature starting from 150°C down to room temperature are achieved. Results show that by combining plasma activation and nanoporous gold structure, the bonding temperature can be reduced dramatically and is able to be applied to MEMS/sensor packaging technologies.
AB - Porous gold with porosity in nanoscale which indicates a highly reactive surface has shown its potential for low temperature bonding. Recently, thermo-compression bonding between nanoporous gold (NPG) and gold film at 200°C has been reported. In this study, with plasma activation, silicon chips with Au film and nanoporous gold structure respectively bonded at room temperature is demonstrated. First, nanoporous gold is fabricated by electrodeposition of gold-tin alloy, followed by chemical dealloying where the Sn component is removed. Then, with Ar plasma treatment, two silicon chips, one side with sputtered Au film and the other with nanoporous gold, are bonded face to face in ambient air. Bonding temperature starting from 150°C down to room temperature are achieved. Results show that by combining plasma activation and nanoporous gold structure, the bonding temperature can be reduced dramatically and is able to be applied to MEMS/sensor packaging technologies.
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U2 - 10.1109/ICSENS.2012.6411157
DO - 10.1109/ICSENS.2012.6411157
M3 - Conference contribution
AN - SCOPUS:84873946066
SN - 9781457717659
T3 - Proceedings of IEEE Sensors
BT - IEEE SENSORS 2012 - Proceedings
T2 - 11th IEEE SENSORS 2012 Conference
Y2 - 28 October 2012 through 31 October 2012
ER -