Substrate bonding at low temperature by using plasma activated porous gold

Wei Shan Wang, Yu Ching Lin, Thomas Gessner, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


Porous gold with porosity in nanoscale which indicates a highly reactive surface has shown its potential for low temperature bonding. Recently, thermo-compression bonding between nanoporous gold (NPG) and gold film at 200°C has been reported. In this study, with plasma activation, silicon chips with Au film and nanoporous gold structure respectively bonded at room temperature is demonstrated. First, nanoporous gold is fabricated by electrodeposition of gold-tin alloy, followed by chemical dealloying where the Sn component is removed. Then, with Ar plasma treatment, two silicon chips, one side with sputtered Au film and the other with nanoporous gold, are bonded face to face in ambient air. Bonding temperature starting from 150°C down to room temperature are achieved. Results show that by combining plasma activation and nanoporous gold structure, the bonding temperature can be reduced dramatically and is able to be applied to MEMS/sensor packaging technologies.

Original languageEnglish
Title of host publicationIEEE SENSORS 2012 - Proceedings
Publication statusPublished - 2012
Event11th IEEE SENSORS 2012 Conference - Taipei, Taiwan, Province of China
Duration: 2012 Oct 282012 Oct 31

Publication series

NameProceedings of IEEE Sensors


Other11th IEEE SENSORS 2012 Conference
Country/TerritoryTaiwan, Province of China

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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