TY - JOUR
T1 - Substrate dependence of structural and transport properties in FeSe 0.5Te0.5 thin films
AU - Hanawa, Masafumi
AU - Ichinose, Ataru
AU - Komiya, Seiki
AU - Tsukada, Ichiro
AU - Akiike, Takanori
AU - Imai, Yoshinori
AU - Hikage, Tatsuo
AU - Kawaguchi, Takahiko
AU - Ikuta, Hiroshi
AU - Maeda, Atsutaka
PY - 2011/5
Y1 - 2011/5
N2 - In order to clarify the best condition for the growth of iron chalcogenide superconductor thin films, we investigated the effect of the substrate on the transport and structural properties of films. Thin films of FeSe 0.5Te0.5 grown by pulsed laser deposition were characterized by DC electrical resistivity, Hall effect, X-ray diffraction measurements, and transmission electron microscopy (TEM) observation. The c-axis length of the FeSe0.5Te0.5 thin films revealed a non-systematic change with the cell constants of the substrates. In the films with poor or no superconductivity, we found the occurrence of oxygen penetration to the film and the formation of amorphous layer between the film and the substrate. The origin of the oxygen penetration and the amorphous layer was the chemical properties of substrate. From the chemical viewpoint, LaAlO3 and MgO substrates were confirmed to be appropriate to grow FeSe 0.5Te0.5 films.
AB - In order to clarify the best condition for the growth of iron chalcogenide superconductor thin films, we investigated the effect of the substrate on the transport and structural properties of films. Thin films of FeSe 0.5Te0.5 grown by pulsed laser deposition were characterized by DC electrical resistivity, Hall effect, X-ray diffraction measurements, and transmission electron microscopy (TEM) observation. The c-axis length of the FeSe0.5Te0.5 thin films revealed a non-systematic change with the cell constants of the substrates. In the films with poor or no superconductivity, we found the occurrence of oxygen penetration to the film and the formation of amorphous layer between the film and the substrate. The origin of the oxygen penetration and the amorphous layer was the chemical properties of substrate. From the chemical viewpoint, LaAlO3 and MgO substrates were confirmed to be appropriate to grow FeSe 0.5Te0.5 films.
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U2 - 10.1143/JJAP.50.053101
DO - 10.1143/JJAP.50.053101
M3 - Article
AN - SCOPUS:79957622580
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 5 PART 1
M1 - 053101
ER -