Sufficiently Side-Mode-Suppressed High-Output-Power 1-5μm DFB Lasers

J. Yoshida; Y. Itaya; Y. Noguchi; T. Matsuoka; Y. Nakano

doi:10.1049/el:19860224

Sufficiently Side-Mode-Suppressed High-Output-Power 1-5μm DFB Lasers

J. Yoshida, Y. Itaya, Y. Noguchi, T. Matsuoka, Y. Nakano

New Industry Creation Hatchery Center (NICHe)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

An antirefiection/high-reflection (AR/HR) facet configuration was applied to a 1-5 μm DFB laser diode. As a result, a maximum output power of 45 mW was obtained. The diode was found to have high spectral stability under high-frequency modulation (side-mode suppression ratio > 30 dB). These results show that this configuration is a technique for high-performance DFB laser diodes.

Original language	English
Pages (from-to)	327-328
Number of pages	2
Journal	Electronics Letters
Volume	22
Issue number	6
DOIs	https://doi.org/10.1049/el:19860224
Publication status	Published - 1986

Keywords

Optical communications
Semiconductor lasers

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10.1049/el:19860224

Cite this

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title = "Sufficiently Side-Mode-Suppressed High-Output-Power 1-5μm DFB Lasers",

abstract = "An antirefiection/high-reflection (AR/HR) facet configuration was applied to a 1-5 μm DFB laser diode. As a result, a maximum output power of 45 mW was obtained. The diode was found to have high spectral stability under high-frequency modulation (side-mode suppression ratio > 30 dB). These results show that this configuration is a technique for high-performance DFB laser diodes.",

keywords = "Optical communications, Semiconductor lasers",

author = "J. Yoshida and Y. Itaya and Y. Noguchi and T. Matsuoka and Y. Nakano",

year = "1986",

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pages = "327--328",

journal = "Electronics Letters",

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T1 - Sufficiently Side-Mode-Suppressed High-Output-Power 1-5μm DFB Lasers

AU - Yoshida, J.

AU - Itaya, Y.

AU - Noguchi, Y.

AU - Matsuoka, T.

AU - Nakano, Y.

PY - 1986

Y1 - 1986

N2 - An antirefiection/high-reflection (AR/HR) facet configuration was applied to a 1-5 μm DFB laser diode. As a result, a maximum output power of 45 mW was obtained. The diode was found to have high spectral stability under high-frequency modulation (side-mode suppression ratio > 30 dB). These results show that this configuration is a technique for high-performance DFB laser diodes.

AB - An antirefiection/high-reflection (AR/HR) facet configuration was applied to a 1-5 μm DFB laser diode. As a result, a maximum output power of 45 mW was obtained. The diode was found to have high spectral stability under high-frequency modulation (side-mode suppression ratio > 30 dB). These results show that this configuration is a technique for high-performance DFB laser diodes.

KW - Optical communications

KW - Semiconductor lasers

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DO - 10.1049/el:19860224

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JO - Electronics Letters

JF - Electronics Letters

IS - 6

ER -

Sufficiently Side-Mode-Suppressed High-Output-Power 1-5μm DFB Lasers

Abstract

Keywords

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