TY - JOUR
T1 - Sulfurization growth of CuInS2 thin film using ditertiarybutylsulfide as a less hazardous source
AU - Sugiyama, Mutsumi
AU - Fujiwara, Chika
AU - Shoji, Ryuki
AU - Chichibu, Shigefusa
PY - 2011/6
Y1 - 2011/6
N2 - Ditertiarybutylsulfide [(t-C4H9)2S: DTBS] was shown to be a promising, less hazardous alternative source for the sulfurization growth of CuInS2 films. Single-phase, polycrystalline CuInS2 films were formed in only 15 min when the sulfurization temperature was 575 °C. Photoluminescence spectra at a low temperature were dominated by characteristic emission bands at 1.34 and 1.37 eV, indicating that the films are a suitable material as a photoabsorbing layer of CuInS 2-based solar cells. These results represent the first step toward realizing a solar cell using a CuInS2 film grown by sulfurization using an organometallic source and conventional, large-scale equipment.
AB - Ditertiarybutylsulfide [(t-C4H9)2S: DTBS] was shown to be a promising, less hazardous alternative source for the sulfurization growth of CuInS2 films. Single-phase, polycrystalline CuInS2 films were formed in only 15 min when the sulfurization temperature was 575 °C. Photoluminescence spectra at a low temperature were dominated by characteristic emission bands at 1.34 and 1.37 eV, indicating that the films are a suitable material as a photoabsorbing layer of CuInS 2-based solar cells. These results represent the first step toward realizing a solar cell using a CuInS2 film grown by sulfurization using an organometallic source and conventional, large-scale equipment.
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U2 - 10.1143/JJAP.50.065503
DO - 10.1143/JJAP.50.065503
M3 - Article
AN - SCOPUS:79959443649
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6 PART 1
M1 - 065503
ER -