Super clean sample of URu2Si2

Tatsuma D. Matsuda, Dai Aoki, Shugo Ikeda, Eetsuji Yamamoto, Yoshinori Haga, Hitoshi Ohkuni, Rikio Settai, Yoshichika Onuki

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


We succeeded in growing a high-quality single crystal of URu 2Si2 by the Czochralski pulling method and applying the solid state electro-transport method under ultrahigh vacuum. The sample quality strongly depends on the position in the ingot. For some parts of this ingot, the electrical resistivity, specific heat and de Haas-van Alplhen effect were measured. The electrical resistivity of the surface sample clearly indicates a T-linear temperature dependence below 5 K. The mean free path in this sample was determined by the de Haas-van Alphen effect to be 11000 Å.

Original languageEnglish
Pages (from-to)362-364
Number of pages3
JournalJournal of the Physical Society of Japan
Issue numberSUPPL.A
Publication statusPublished - 2008


  • dHvA
  • Electrical resistivity
  • URuSi


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