Superconducting properties and crystallinity of as-grown MgB2 thin films synthesized using an in-plane-lattice Near-matched epitaxial buffer layer

T. Kato; K. Yamanaka; S. Yata; Ya Yamada; S. Kubo; Y. Yamada; A. Matsushita; O. Sakata; S. Kimura; M. Takata

doi:10.1109/TASC.2005.848846

Superconducting properties and crystallinity of as-grown MgB₂ thin films synthesized using an in-plane-lattice Near-matched epitaxial buffer layer

T. Kato, K. Yamanaka, S. Yata, Ya Yamada, S. Kubo, Y. Yamada, A. Matsushita, O. Sakata, S. Kimura, M. Takata

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

As-grown MgB₂ thin films were synthesized at a low temperature of 270°C on an in-plane-lattice-near-matched TiZr buffer layer grown on Al₂O₃ - C substrate and Al₂O₃ substrate without buffer. The critical temperature (T_c), critical current density (J_c) and crystallinity of MgB₂ on TiZr buffered substrates were found to be high compared with those of MgB₂ on Al₂O₃; the improved T_c was around 35 K and J_c 6.6 × 10⁵ A/cm² at 5 K under the magnetic field of 1 T perpendicular to the film surface. The epitaxial relationship of MgB₂ thin film on buffer layer was MgB₂ [01 - 10] || TiZr[01 - 10] || Al₂O₃[11 - 20], but MgB ₂ thin film without buffer layer had no epitaxial relationship.

Original language	English
Pages (from-to)	3257-3260
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	15
Issue number	2 PART III
DOIs	https://doi.org/10.1109/TASC.2005.848846
Publication status	Published - 2005 Jun
Externally published	Yes

Keywords

As-grown thin film
Buffer layer
Epitaxial growth
MgB

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/TASC.2005.848846

Cite this

Kato, T., Yamanaka, K., Yata, S., Yamada, Y., Kubo, S., Yamada, Y., Matsushita, A., Sakata, O., Kimura, S., & Takata, M. (2005). Superconducting properties and crystallinity of as-grown MgB₂ thin films synthesized using an in-plane-lattice Near-matched epitaxial buffer layer. IEEE Transactions on Applied Superconductivity, 15(2 PART III), 3257-3260. https://doi.org/10.1109/TASC.2005.848846

Kato, T, Yamanaka, K, Yata, S, Yamada, Y, Kubo, S, Yamada, Y, Matsushita, A, Sakata, O, Kimura, S & Takata, M 2005, 'Superconducting properties and crystallinity of as-grown MgB₂ thin films synthesized using an in-plane-lattice Near-matched epitaxial buffer layer', IEEE Transactions on Applied Superconductivity, vol. 15, no. 2 PART III, pp. 3257-3260. https://doi.org/10.1109/TASC.2005.848846

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title = "Superconducting properties and crystallinity of as-grown MgB2 thin films synthesized using an in-plane-lattice Near-matched epitaxial buffer layer",

abstract = "As-grown MgB2 thin films were synthesized at a low temperature of 270°C on an in-plane-lattice-near-matched TiZr buffer layer grown on Al2O3 - C substrate and Al2O3 substrate without buffer. The critical temperature (Tc), critical current density (Jc) and crystallinity of MgB2 on TiZr buffered substrates were found to be high compared with those of MgB2 on Al2O3; the improved Tc was around 35 K and Jc 6.6 × 105 A/cm2 at 5 K under the magnetic field of 1 T perpendicular to the film surface. The epitaxial relationship of MgB2 thin film on buffer layer was MgB2 [01 - 10] || TiZr[01 - 10] || Al2O3[11 - 20], but MgB 2 thin film without buffer layer had no epitaxial relationship.",

keywords = "As-grown thin film, Buffer layer, Epitaxial growth, MgB",

author = "T. Kato and K. Yamanaka and S. Yata and Ya Yamada and S. Kubo and Y. Yamada and A. Matsushita and O. Sakata and S. Kimura and M. Takata",

year = "2005",

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doi = "10.1109/TASC.2005.848846",

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AU - Kato, T.

AU - Yamanaka, K.

AU - Yata, S.

AU - Yamada, Ya

AU - Kubo, S.

AU - Yamada, Y.

AU - Matsushita, A.

AU - Sakata, O.

AU - Kimura, S.

AU - Takata, M.

PY - 2005/6

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N2 - As-grown MgB2 thin films were synthesized at a low temperature of 270°C on an in-plane-lattice-near-matched TiZr buffer layer grown on Al2O3 - C substrate and Al2O3 substrate without buffer. The critical temperature (Tc), critical current density (Jc) and crystallinity of MgB2 on TiZr buffered substrates were found to be high compared with those of MgB2 on Al2O3; the improved Tc was around 35 K and Jc 6.6 × 105 A/cm2 at 5 K under the magnetic field of 1 T perpendicular to the film surface. The epitaxial relationship of MgB2 thin film on buffer layer was MgB2 [01 - 10] || TiZr[01 - 10] || Al2O3[11 - 20], but MgB 2 thin film without buffer layer had no epitaxial relationship.

AB - As-grown MgB2 thin films were synthesized at a low temperature of 270°C on an in-plane-lattice-near-matched TiZr buffer layer grown on Al2O3 - C substrate and Al2O3 substrate without buffer. The critical temperature (Tc), critical current density (Jc) and crystallinity of MgB2 on TiZr buffered substrates were found to be high compared with those of MgB2 on Al2O3; the improved Tc was around 35 K and Jc 6.6 × 105 A/cm2 at 5 K under the magnetic field of 1 T perpendicular to the film surface. The epitaxial relationship of MgB2 thin film on buffer layer was MgB2 [01 - 10] || TiZr[01 - 10] || Al2O3[11 - 20], but MgB 2 thin film without buffer layer had no epitaxial relationship.

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