Nb-Si films were deposited on Nb84 Si16, Ti3Au and W3Re films with an A15 structure by sputtering. The films with double layers were analyzed using Auger electron spectroscopy. Phase analyses of the sputtered Nb-Si films were carried out by X-ray diffraction studies. The A15 Nb.78Si.22 and Nb.75Si.25 films were grown epitaxially on Nb.84Si.16 and W3Re substrate films. The superconducting transition temperatures of these epitaxial films were found to range between 5 and 9 K.