TY - GEN
T1 - Superconducting property in tungsten containing amorphous carbon composite
AU - Miki, Hiroyuki
AU - Takeno, Takanori
AU - Takagi, Toshiyuki
AU - Bozhko, Alexei
AU - Shupegin, Mikhail
AU - Onodera, Hideya
PY - 2006
Y1 - 2006
N2 - Superconductivity in tungsten-containing carbon-oxide film was reported. The film with 500 nm thickness was deposited onto polycrystalline silicon-oxides using chemical vapor deposition and co-sputtering of tungsten metal target. The structure of the film was investigated by Raman spectroscopy and X-ray diffraction measurements and the results indicated that the structure of the film is amorphous. The temperature dependence on resistivity was measured in the temperature range of 2-300 K. At the temperature of around 4.2 K resistive superconducting transition was observed. In order that the tungsten oxide and tungsten carbide with which superconductive transition temperature is different formed the finite cluster group, it can be understand by percolation theory that the superconducting phase of the total system appears. The diamagnetism was observed below 3.8 K, which is consistent with resistive superconducting transition.
AB - Superconductivity in tungsten-containing carbon-oxide film was reported. The film with 500 nm thickness was deposited onto polycrystalline silicon-oxides using chemical vapor deposition and co-sputtering of tungsten metal target. The structure of the film was investigated by Raman spectroscopy and X-ray diffraction measurements and the results indicated that the structure of the film is amorphous. The temperature dependence on resistivity was measured in the temperature range of 2-300 K. At the temperature of around 4.2 K resistive superconducting transition was observed. In order that the tungsten oxide and tungsten carbide with which superconductive transition temperature is different formed the finite cluster group, it can be understand by percolation theory that the superconducting phase of the total system appears. The diamagnetism was observed below 3.8 K, which is consistent with resistive superconducting transition.
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U2 - 10.1109/NANOEL.2006.1609729
DO - 10.1109/NANOEL.2006.1609729
M3 - Conference contribution
AN - SCOPUS:33750810183
SN - 0780393589
SN - 9780780393585
T3 - NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
SP - 278
EP - 282
BT - NanoSingapore 2006
T2 - 2006 IEEE Conference on Emerging Technologies - Nanoelectronics
Y2 - 10 January 2006 through 13 January 2006
ER -