Superconducting three-terminal devices using an inas-based two-dimensional electron gas

Hideaki Takayanagi; Tatsushi Akazaki; Junsaku Nitta; Takatomo Enoki

doi:10.1143/JJAP.34.1391

Superconducting three-terminal devices using an inas-based two-dimensional electron gas

Hideaki Takayanagi, Tatsushi Akazaki, Junsaku Nitta, Takatomo Enoki

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A newly fabricated three-terminal Josephson junction is coupled with an InAs-inserted-channel InAlAs/lnGaAs heterostructure. The two-dimensional electron gas (2DEG) confined in the inserted InAs layer has a high mobilityof 73800 cm²/V*s and a high sheet-carrier density of 1.98 x 10¹² cm^-2 at 4.2 K. The supercurrent flows through the2DEG and can be controlled by gate voltage. The critical current and the normal resistance as a function of gatevoltage are measured and the sheet-carrier density dependence of the critical current is obtained. The experimental results for this dependence are explained by the superconducting proximity effect theory and by the normaltransport of the 2DEG.

Original language	English
Pages (from-to)	1391-1395
Number of pages	5
Journal	Japanese journal of applied physics
Volume	34
Issue number	2S
DOIs	https://doi.org/10.1143/JJAP.34.1391
Publication status	Published - 1995 Feb
Externally published	Yes

Keywords

Coherence length
Heterostructure
JOFET
Josephson junction
Proximity effect
Three-terminal operation

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.34.1391

Cite this

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title = "Superconducting three-terminal devices using an inas-based two-dimensional electron gas",

abstract = "A newly fabricated three-terminal Josephson junction is coupled with an InAs-inserted-channel InAlAs/lnGaAs heterostructure. The two-dimensional electron gas (2DEG) confined in the inserted InAs layer has a high mobilityof 73800 cm2/V*s and a high sheet-carrier density of 1.98 x 1012 cm-2 at 4.2 K. The supercurrent flows through the2DEG and can be controlled by gate voltage. The critical current and the normal resistance as a function of gatevoltage are measured and the sheet-carrier density dependence of the critical current is obtained. The experimental results for this dependence are explained by the superconducting proximity effect theory and by the normaltransport of the 2DEG.",

keywords = "Coherence length, Heterostructure, JOFET, Josephson junction, Proximity effect, Three-terminal operation",

author = "Hideaki Takayanagi and Tatsushi Akazaki and Junsaku Nitta and Takatomo Enoki",

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T1 - Superconducting three-terminal devices using an inas-based two-dimensional electron gas

AU - Takayanagi, Hideaki

AU - Akazaki, Tatsushi

AU - Nitta, Junsaku

AU - Enoki, Takatomo

PY - 1995/2

Y1 - 1995/2

N2 - A newly fabricated three-terminal Josephson junction is coupled with an InAs-inserted-channel InAlAs/lnGaAs heterostructure. The two-dimensional electron gas (2DEG) confined in the inserted InAs layer has a high mobilityof 73800 cm2/V*s and a high sheet-carrier density of 1.98 x 1012 cm-2 at 4.2 K. The supercurrent flows through the2DEG and can be controlled by gate voltage. The critical current and the normal resistance as a function of gatevoltage are measured and the sheet-carrier density dependence of the critical current is obtained. The experimental results for this dependence are explained by the superconducting proximity effect theory and by the normaltransport of the 2DEG.

AB - A newly fabricated three-terminal Josephson junction is coupled with an InAs-inserted-channel InAlAs/lnGaAs heterostructure. The two-dimensional electron gas (2DEG) confined in the inserted InAs layer has a high mobilityof 73800 cm2/V*s and a high sheet-carrier density of 1.98 x 1012 cm-2 at 4.2 K. The supercurrent flows through the2DEG and can be controlled by gate voltage. The critical current and the normal resistance as a function of gatevoltage are measured and the sheet-carrier density dependence of the critical current is obtained. The experimental results for this dependence are explained by the superconducting proximity effect theory and by the normaltransport of the 2DEG.

KW - Coherence length

KW - Heterostructure

KW - JOFET

KW - Josephson junction

KW - Proximity effect

KW - Three-terminal operation

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 2S

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Superconducting three-terminal devices using an inas-based two-dimensional electron gas

Abstract

Keywords

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