Superconducting three-terminal devices using an inas-based two-dimensional electron gas

Hideaki Takayanagi, Tatsushi Akazaki, Junsaku Nitta, Takatomo Enoki

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


A newly fabricated three-terminal Josephson junction is coupled with an InAs-inserted-channel InAlAs/lnGaAs heterostructure. The two-dimensional electron gas (2DEG) confined in the inserted InAs layer has a high mobilityof 73800 cm2/V*s and a high sheet-carrier density of 1.98 x 1012 cm-2 at 4.2 K. The supercurrent flows through the2DEG and can be controlled by gate voltage. The critical current and the normal resistance as a function of gatevoltage are measured and the sheet-carrier density dependence of the critical current is obtained. The experimental results for this dependence are explained by the superconducting proximity effect theory and by the normaltransport of the 2DEG.

Original languageEnglish
Pages (from-to)1391-1395
Number of pages5
JournalJapanese journal of applied physics
Issue number2S
Publication statusPublished - 1995 Feb
Externally publishedYes


  • Coherence length
  • Heterostructure
  • Josephson junction
  • Proximity effect
  • Three-terminal operation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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