Suppressed variability of current-onset voltage of FinFETs by improvement of work function uniformity of metal gates

T. Matsukawa; Y. X. Liu; K. Endo; W. Mizubayashi; J. Tsukada; Y. Ishikawa; H. Yamauchi; S. O'Uchi; H. Ota; S. Migita; Y. Morita; M. Masahara

doi:10.1109/VLSI-TSA.2013.6545606

Suppressed variability of current-onset voltage of FinFETs by improvement of work function uniformity of metal gates

T. Matsukawa, Y. X. Liu, K. Endo, W. Mizubayashi, J. Tsukada, Y. Ishikawa, H. Yamauchi, S. O'Uchi, H. Ota, S. Migita, Y. Morita, M. Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Influence of work function (WF) uniformity of metal gates (MGs) on current-onset voltage (COV) fluctuation is investigated in detail for MG FinFETs. In addition to significantly suppressed variability of threshold voltage (V_t) itself, FinFETs with an amorphous TaSiN MG exhibit smaller COV fluctuation than that with a polycrystalline TiN MG. It is revealed that the COV variability is caused by the potential non-uniformity in the channel due to the WF variation of the poly grains and is effectively improved using the amorphous MG.

Original language	English
Title of host publication	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs	https://doi.org/10.1109/VLSI-TSA.2013.6545606
Publication status	Published - 2013
Event	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan, Province of China Duration: 2013 Apr 22 → 2013 Apr 24

Publication series

Name	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	13/4/22 → 13/4/24

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10.1109/VLSI-TSA.2013.6545606

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Matsukawa, T., Liu, Y. X., Endo, K., Mizubayashi, W., Tsukada, J., Ishikawa, Y., Yamauchi, H., O'Uchi, S., Ota, H., Migita, S., Morita, Y., & Masahara, M. (2013). Suppressed variability of current-onset voltage of FinFETs by improvement of work function uniformity of metal gates. In 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 Article 6545606 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). https://doi.org/10.1109/VLSI-TSA.2013.6545606

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title = "Suppressed variability of current-onset voltage of FinFETs by improvement of work function uniformity of metal gates",

abstract = "Influence of work function (WF) uniformity of metal gates (MGs) on current-onset voltage (COV) fluctuation is investigated in detail for MG FinFETs. In addition to significantly suppressed variability of threshold voltage (Vt) itself, FinFETs with an amorphous TaSiN MG exhibit smaller COV fluctuation than that with a polycrystalline TiN MG. It is revealed that the COV variability is caused by the potential non-uniformity in the channel due to the WF variation of the poly grains and is effectively improved using the amorphous MG.",

author = "T. Matsukawa and Liu, {Y. X.} and K. Endo and W. Mizubayashi and J. Tsukada and Y. Ishikawa and H. Yamauchi and S. O'Uchi and H. Ota and S. Migita and Y. Morita and M. Masahara",

year = "2013",

doi = "10.1109/VLSI-TSA.2013.6545606",

language = "English",

isbn = "9781467330817",

series = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",

booktitle = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",

note = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 ; Conference date: 22-04-2013 Through 24-04-2013",

}

Matsukawa, T, Liu, YX, Endo, K, Mizubayashi, W, Tsukada, J, Ishikawa, Y, Yamauchi, H, O'Uchi, S, Ota, H, Migita, S, Morita, Y & Masahara, M 2013, Suppressed variability of current-onset voltage of FinFETs by improvement of work function uniformity of metal gates. in 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013., 6545606, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, Hsinchu, Taiwan, Province of China, 13/4/22. https://doi.org/10.1109/VLSI-TSA.2013.6545606

Suppressed variability of current-onset voltage of FinFETs by improvement of work function uniformity of metal gates. / Matsukawa, T.; Liu, Y. X.; Endo, K. et al.
2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 2013. 6545606 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Suppressed variability of current-onset voltage of FinFETs by improvement of work function uniformity of metal gates

AU - Matsukawa, T.

AU - Liu, Y. X.

AU - Endo, K.

AU - Mizubayashi, W.

AU - Tsukada, J.

AU - Ishikawa, Y.

AU - Yamauchi, H.

AU - O'Uchi, S.

AU - Ota, H.

AU - Migita, S.

AU - Morita, Y.

AU - Masahara, M.

PY - 2013

Y1 - 2013

N2 - Influence of work function (WF) uniformity of metal gates (MGs) on current-onset voltage (COV) fluctuation is investigated in detail for MG FinFETs. In addition to significantly suppressed variability of threshold voltage (Vt) itself, FinFETs with an amorphous TaSiN MG exhibit smaller COV fluctuation than that with a polycrystalline TiN MG. It is revealed that the COV variability is caused by the potential non-uniformity in the channel due to the WF variation of the poly grains and is effectively improved using the amorphous MG.

AB - Influence of work function (WF) uniformity of metal gates (MGs) on current-onset voltage (COV) fluctuation is investigated in detail for MG FinFETs. In addition to significantly suppressed variability of threshold voltage (Vt) itself, FinFETs with an amorphous TaSiN MG exhibit smaller COV fluctuation than that with a polycrystalline TiN MG. It is revealed that the COV variability is caused by the potential non-uniformity in the channel due to the WF variation of the poly grains and is effectively improved using the amorphous MG.

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DO - 10.1109/VLSI-TSA.2013.6545606

M3 - Conference contribution

AN - SCOPUS:84881137590

SN - 9781467330817

T3 - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

BT - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

T2 - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Y2 - 22 April 2013 through 24 April 2013

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Matsukawa T, Liu YX, Endo K, Mizubayashi W, Tsukada J, Ishikawa Y et al. Suppressed variability of current-onset voltage of FinFETs by improvement of work function uniformity of metal gates. In 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 2013. 6545606. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). doi: 10.1109/VLSI-TSA.2013.6545606

Suppressed variability of current-onset voltage of FinFETs by improvement of work function uniformity of metal gates

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