Suppressing Vt and Gm variability of FinFETs using amorphous metal gates for 14 nm and beyond

Takashi Matsukawa, Yongxun Liu, Wataru Mizubayashi, Junichi Tsukada, Hiromi Yamauchi, Kazuhiko Endo, Yuki Ishikawa, Shin Ichi O'Uchi, Hiroyuki Ota, Shinji Migita, Yukinori Morita, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

16 Citations (Scopus)

Abstract

Amorphous TaSiN metal gates (MGs) are successfully introduced in FinFETs to suppress work function variation (WFV) of the MG, which is a dominant contributor to threshold voltage (Vt) variability of the undoped channel MG FinFETs. Comparing with a poly-crystalline TiN gate, the TaSiN gate reduces Vt variation drastically and records the smallest A Vt value of 1.34 mVμm reported so far for MG FinFETs. Interface traps also become a dominant AVt origin in the case of well-suppressed WFV using the amorphous M G. The WFV suppression is also effective to reduce trans-conductance (Gm) variability which will be a dominant source of on-current (Ion) variability in 14 nm technology and beyond.

Original languageEnglish
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages8.2.1-8.2.4
DOIs
Publication statusPublished - 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: 2012 Dec 102012 Dec 13

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/TerritoryUnited States
CitySan Francisco, CA
Period12/12/1012/12/13

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