Suppression mechanism of optical gain formation in InxGa1-xN quantum well structures due to localized carriers

Kazunobu Kojima; Mitsuru Funato; Yoichi Kawakami; Yukio Narukawa; Takashi Mukai

doi:10.1016/j.ssc.2006.07.038

Suppression mechanism of optical gain formation in In_xGa_1-xN quantum well structures due to localized carriers

Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami, Yukio Narukawa, Takashi Mukai

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have studied the optical gain and its suppression mechanism of In_xGa_1-xN multiple quantum well structures with different indium compositions. The variable stripe length method and the up-conversion method were employed in this research. It was found that the optical gain spectra became broad and the differential gain decreased with increasing the indium composition. These results indicated that inhomogeneous broadening affected not only spontaneous emission but also stimulated emission. The rise time of photoluminescence under a strong excitation condition was changed from 0.95 ps to 12.4 ps depending on the indium composition. Assuming the rise time reflects the relaxation lifetime from the absorption edge energy to population inversion levels, our calculation suggested that long rise times led to gain suppression in In_xGa_1-xN laser diodes with larger indium compositions.

Original language	English
Pages (from-to)	182-184
Number of pages	3
Journal	Solid State Communications
Volume	140
Issue number	3-4
DOIs	https://doi.org/10.1016/j.ssc.2006.07.038
Publication status	Published - 2006 Oct
Externally published	Yes

Keywords

A. InGaN LD
D. Optical gain
E. Ultrafast spectroscopy

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.ssc.2006.07.038

Cite this

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title = "Suppression mechanism of optical gain formation in InxGa1-xN quantum well structures due to localized carriers",

abstract = "We have studied the optical gain and its suppression mechanism of InxGa1-xN multiple quantum well structures with different indium compositions. The variable stripe length method and the up-conversion method were employed in this research. It was found that the optical gain spectra became broad and the differential gain decreased with increasing the indium composition. These results indicated that inhomogeneous broadening affected not only spontaneous emission but also stimulated emission. The rise time of photoluminescence under a strong excitation condition was changed from 0.95 ps to 12.4 ps depending on the indium composition. Assuming the rise time reflects the relaxation lifetime from the absorption edge energy to population inversion levels, our calculation suggested that long rise times led to gain suppression in InxGa1-xN laser diodes with larger indium compositions.",

keywords = "A. InGaN LD, D. Optical gain, E. Ultrafast spectroscopy",

author = "Kazunobu Kojima and Mitsuru Funato and Yoichi Kawakami and Yukio Narukawa and Takashi Mukai",

year = "2006",

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language = "English",

volume = "140",

pages = "182--184",

journal = "Solid State Communications",

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TY - JOUR

T1 - Suppression mechanism of optical gain formation in InxGa1-xN quantum well structures due to localized carriers

AU - Kojima, Kazunobu

AU - Funato, Mitsuru

AU - Kawakami, Yoichi

AU - Narukawa, Yukio

AU - Mukai, Takashi

PY - 2006/10

Y1 - 2006/10

N2 - We have studied the optical gain and its suppression mechanism of InxGa1-xN multiple quantum well structures with different indium compositions. The variable stripe length method and the up-conversion method were employed in this research. It was found that the optical gain spectra became broad and the differential gain decreased with increasing the indium composition. These results indicated that inhomogeneous broadening affected not only spontaneous emission but also stimulated emission. The rise time of photoluminescence under a strong excitation condition was changed from 0.95 ps to 12.4 ps depending on the indium composition. Assuming the rise time reflects the relaxation lifetime from the absorption edge energy to population inversion levels, our calculation suggested that long rise times led to gain suppression in InxGa1-xN laser diodes with larger indium compositions.

AB - We have studied the optical gain and its suppression mechanism of InxGa1-xN multiple quantum well structures with different indium compositions. The variable stripe length method and the up-conversion method were employed in this research. It was found that the optical gain spectra became broad and the differential gain decreased with increasing the indium composition. These results indicated that inhomogeneous broadening affected not only spontaneous emission but also stimulated emission. The rise time of photoluminescence under a strong excitation condition was changed from 0.95 ps to 12.4 ps depending on the indium composition. Assuming the rise time reflects the relaxation lifetime from the absorption edge energy to population inversion levels, our calculation suggested that long rise times led to gain suppression in InxGa1-xN laser diodes with larger indium compositions.

KW - A. InGaN LD

KW - D. Optical gain

KW - E. Ultrafast spectroscopy

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