Suppression of 1/f noise in accumulation mode FD-SOI MOSFETs on Si(lOO) and (110) surfaces

W. Cheng, C. Tye, P. Gaubert, A. Teramoto, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Citations (Scopus)

Abstract

In this paper, a new approach to reduce the 1/f noise levels in the MOSFETs on varied silicon orientations, such as Si(lOO) and (110) surfaces, has been carried out. We focus on the Accumulation-mode (AM) FD-SOl device structure and demonstrate that the 1/f noise levels in this AM FD-SOl MOSFETs are obviously reduced on both the Si(lOO) and (110) surfaces.

Original languageEnglish
Title of host publicationNoise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009
Pages337-340
Number of pages4
DOIs
Publication statusPublished - 2009
Event20th International Conference on Noise and Fluctuations, ICNF 2009 - Pisa, Italy
Duration: 2009 Jun 142009 Jun 19

Publication series

NameAIP Conference Proceedings
Volume1129
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference20th International Conference on Noise and Fluctuations, ICNF 2009
Country/TerritoryItaly
CityPisa
Period09/6/1409/6/19

Keywords

  • 1/f noise
  • Accumulation-mode
  • Silicon orientation
  • SOI

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