Suppression of B outdiffusion by C incorporation in ultra-high-speed SiGeC HBTs

Katsuya Oda; Isao Suzumura; Makoto Miura; Eiji Ohue; Reiko Hayami; Akihiro Kodama; Hiromi Shimamoto; Katsuyoshi Washio

doi:10.1143/jjap.42.2359

Suppression of B outdiffusion by C incorporation in ultra-high-speed SiGeC HBTs

Katsuya Oda, Isao Suzumura, Makoto Miura, Eiji Ohue, Reiko Hayami, Akihiro Kodama, Hiromi Shimamoto, Katsuyoshi Washio

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The effect of incorporated C on preventing the diffusion of B in selectively grown Si_1-x-yGe_xC_y layers has been studied. The diffusivity of B was significantly decreased by increasing the C content, even when the concentrations of B were high. Furthermore, self-aligned SiGeC heterojunction bipolar transistors (HBTs) were fabricated, and the effects of incorporating C in the base layer on device performance were evaluated. A shallower base with a higher concentration of B was produced by suppression the B outdiffusion. Consequently, low values for base resistance and a high cutoff frequency of 168 GHz were achieved with a 4-nm-thick p-Si_1-x-yGe_xC_y layer where the C content was 0.2% and the B concentration was 1 × 10²⁰ cm^-3.

Original language	English
Pages (from-to)	2359-2362
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.42.2359
Publication status	Published - 2003 Apr
Externally published	Yes

Keywords

Base resistance
C incorporation
Cutoff frequency
HBT
Outdiffusion
SiGeC
UHV/CVD

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.42.2359

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title = "Suppression of B outdiffusion by C incorporation in ultra-high-speed SiGeC HBTs",

abstract = "The effect of incorporated C on preventing the diffusion of B in selectively grown Si1-x-yGexCy layers has been studied. The diffusivity of B was significantly decreased by increasing the C content, even when the concentrations of B were high. Furthermore, self-aligned SiGeC heterojunction bipolar transistors (HBTs) were fabricated, and the effects of incorporating C in the base layer on device performance were evaluated. A shallower base with a higher concentration of B was produced by suppression the B outdiffusion. Consequently, low values for base resistance and a high cutoff frequency of 168 GHz were achieved with a 4-nm-thick p-Si1-x-yGexCy layer where the C content was 0.2% and the B concentration was 1 × 1020 cm-3.",

keywords = "Base resistance, C incorporation, Cutoff frequency, HBT, Outdiffusion, SiGeC, UHV/CVD",

author = "Katsuya Oda and Isao Suzumura and Makoto Miura and Eiji Ohue and Reiko Hayami and Akihiro Kodama and Hiromi Shimamoto and Katsuyoshi Washio",

year = "2003",

month = apr,

doi = "10.1143/jjap.42.2359",

language = "English",

volume = "42",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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T1 - Suppression of B outdiffusion by C incorporation in ultra-high-speed SiGeC HBTs

AU - Oda, Katsuya

AU - Suzumura, Isao

AU - Miura, Makoto

AU - Ohue, Eiji

AU - Hayami, Reiko

AU - Kodama, Akihiro

AU - Shimamoto, Hiromi

AU - Washio, Katsuyoshi

PY - 2003/4

Y1 - 2003/4

N2 - The effect of incorporated C on preventing the diffusion of B in selectively grown Si1-x-yGexCy layers has been studied. The diffusivity of B was significantly decreased by increasing the C content, even when the concentrations of B were high. Furthermore, self-aligned SiGeC heterojunction bipolar transistors (HBTs) were fabricated, and the effects of incorporating C in the base layer on device performance were evaluated. A shallower base with a higher concentration of B was produced by suppression the B outdiffusion. Consequently, low values for base resistance and a high cutoff frequency of 168 GHz were achieved with a 4-nm-thick p-Si1-x-yGexCy layer where the C content was 0.2% and the B concentration was 1 × 1020 cm-3.

AB - The effect of incorporated C on preventing the diffusion of B in selectively grown Si1-x-yGexCy layers has been studied. The diffusivity of B was significantly decreased by increasing the C content, even when the concentrations of B were high. Furthermore, self-aligned SiGeC heterojunction bipolar transistors (HBTs) were fabricated, and the effects of incorporating C in the base layer on device performance were evaluated. A shallower base with a higher concentration of B was produced by suppression the B outdiffusion. Consequently, low values for base resistance and a high cutoff frequency of 168 GHz were achieved with a 4-nm-thick p-Si1-x-yGexCy layer where the C content was 0.2% and the B concentration was 1 × 1020 cm-3.

KW - Base resistance

KW - C incorporation

KW - Cutoff frequency

KW - HBT

KW - Outdiffusion

KW - SiGeC

KW - UHV/CVD

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 4 B

ER -

Suppression of B outdiffusion by C incorporation in ultra-high-speed SiGeC HBTs

Abstract

Keywords

ASJC Scopus subject areas

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