Suppression of B outdiffusion by C incorporation in ultra-high-speed SiGeC HBTs

Katsuya Oda, Isao Suzumura, Makoto Miura, Eiji Ohue, Reiko Hayami, Akihiro Kodama, Hiromi Shimamoto, Katsuyoshi Washio

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The effect of incorporated C on preventing the diffusion of B in selectively grown Si1-x-yGexCy layers has been studied. The diffusivity of B was significantly decreased by increasing the C content, even when the concentrations of B were high. Furthermore, self-aligned SiGeC heterojunction bipolar transistors (HBTs) were fabricated, and the effects of incorporating C in the base layer on device performance were evaluated. A shallower base with a higher concentration of B was produced by suppression the B outdiffusion. Consequently, low values for base resistance and a high cutoff frequency of 168 GHz were achieved with a 4-nm-thick p-Si1-x-yGexCy layer where the C content was 0.2% and the B concentration was 1 × 1020 cm-3.

Original languageEnglish
Pages (from-to)2359-2362
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2003 Apr
Externally publishedYes


  • Base resistance
  • C incorporation
  • Cutoff frequency
  • HBT
  • Outdiffusion
  • SiGeC

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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