Suppression of defect related host luminescence in LuAG single crystals

Hiraku Ogino; Akira Yoshikawa; Martin Nikl; Romana Kucerkova; Jun Ichi Shimoyama; Kohji Kishio

doi:10.1016/j.phpro.2009.07.011

Suppression of defect related host luminescence in LuAG single crystals

Hiraku Ogino, Akira Yoshikawa, Martin Nikl, Romana Kucerkova, Jun Ichi Shimoyama, Kohji Kishio

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

17 Citations (Scopus)

Abstract

To study suppression of the unwanted host luminescence in aluminum garnet crystals, effect of Ga substitution in both undoped and Eu doped Lu ₃Al₅O₁₂ single crystal was examined at the crystals grown by the micro-pulling down(μ-PD) method. Optical properties such as excitation spectra, radioluminescence spectra and photoluminescence decay are presented. In the GA-admixed crystal strong suppression of host luminescence due to an exciton localized around the Lu-Al antisite defect was observed even at the Ga concentration of 10mol%. Ga substitution also modify the charge transfer excitation band in the Eu doped LuGAG and change the decay time in the Eu³⁺ red emission lines.

Original language	English
Pages (from-to)	191-205
Number of pages	15
Journal	Physics Procedia
Volume	2
Issue number	2
DOIs	https://doi.org/10.1016/j.phpro.2009.07.011
Publication status	Published - 2009 Aug
Event	2008 International Conference on Luminescence and Optical Spectroscopy of Condensed Matter, ICL'08 - Lyon, France Duration: 2008 Jul 7 → 2008 Jul 11

Keywords

A1. Characterization
A2. Growth from melt
B1. Oxides
B2. Scintillator materials

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1016/j.phpro.2009.07.011

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title = "Suppression of defect related host luminescence in LuAG single crystals",

abstract = "To study suppression of the unwanted host luminescence in aluminum garnet crystals, effect of Ga substitution in both undoped and Eu doped Lu 3Al5O12 single crystal was examined at the crystals grown by the micro-pulling down(μ-PD) method. Optical properties such as excitation spectra, radioluminescence spectra and photoluminescence decay are presented. In the GA-admixed crystal strong suppression of host luminescence due to an exciton localized around the Lu-Al antisite defect was observed even at the Ga concentration of 10mol%. Ga substitution also modify the charge transfer excitation band in the Eu doped LuGAG and change the decay time in the Eu3+ red emission lines.",

keywords = "A1. Characterization, A2. Growth from melt, B1. Oxides, B2. Scintillator materials",

author = "Hiraku Ogino and Akira Yoshikawa and Martin Nikl and Romana Kucerkova and Shimoyama, {Jun Ichi} and Kohji Kishio",

note = "Funding Information: University. The partial support of the Czech MSMT, KONTAKT grant ME953 is also gratefully; 2008 International Conference on Luminescence and Optical Spectroscopy of Condensed Matter, ICL'08 ; Conference date: 07-07-2008 Through 11-07-2008",

year = "2009",

month = aug,

doi = "10.1016/j.phpro.2009.07.011",

language = "English",

volume = "2",

pages = "191--205",

journal = "Physics Procedia",

issn = "1875-3892",

publisher = "Elsevier BV",

number = "2",

}

TY - JOUR

T1 - Suppression of defect related host luminescence in LuAG single crystals

AU - Ogino, Hiraku

AU - Yoshikawa, Akira

AU - Nikl, Martin

AU - Kucerkova, Romana

AU - Shimoyama, Jun Ichi

AU - Kishio, Kohji

N1 - Funding Information: University. The partial support of the Czech MSMT, KONTAKT grant ME953 is also gratefully

PY - 2009/8

Y1 - 2009/8

N2 - To study suppression of the unwanted host luminescence in aluminum garnet crystals, effect of Ga substitution in both undoped and Eu doped Lu 3Al5O12 single crystal was examined at the crystals grown by the micro-pulling down(μ-PD) method. Optical properties such as excitation spectra, radioluminescence spectra and photoluminescence decay are presented. In the GA-admixed crystal strong suppression of host luminescence due to an exciton localized around the Lu-Al antisite defect was observed even at the Ga concentration of 10mol%. Ga substitution also modify the charge transfer excitation band in the Eu doped LuGAG and change the decay time in the Eu3+ red emission lines.

AB - To study suppression of the unwanted host luminescence in aluminum garnet crystals, effect of Ga substitution in both undoped and Eu doped Lu 3Al5O12 single crystal was examined at the crystals grown by the micro-pulling down(μ-PD) method. Optical properties such as excitation spectra, radioluminescence spectra and photoluminescence decay are presented. In the GA-admixed crystal strong suppression of host luminescence due to an exciton localized around the Lu-Al antisite defect was observed even at the Ga concentration of 10mol%. Ga substitution also modify the charge transfer excitation band in the Eu doped LuGAG and change the decay time in the Eu3+ red emission lines.

KW - A1. Characterization

KW - A2. Growth from melt

KW - B1. Oxides

KW - B2. Scintillator materials

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UR - http://www.scopus.com/inward/citedby.url?scp=77949360226&partnerID=8YFLogxK

U2 - 10.1016/j.phpro.2009.07.011

DO - 10.1016/j.phpro.2009.07.011

M3 - Conference article

AN - SCOPUS:77949360226

SN - 1875-3892

VL - 2

SP - 191

EP - 205

JO - Physics Procedia

JF - Physics Procedia

IS - 2

T2 - 2008 International Conference on Luminescence and Optical Spectroscopy of Condensed Matter, ICL'08

Y2 - 7 July 2008 through 11 July 2008

ER -

Suppression of defect related host luminescence in LuAG single crystals

Abstract

Keywords

ASJC Scopus subject areas

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