Suppression of host luminescence in the Pr:LuAG scintillator

Hiraku Ogino; Kei Kamada; Akira Yoshikawa; Fumio Saito; Jan Pejchal; Jiri A. Mares; Martin Nikl; Anna Vedda; Jun Ichi Shimoyama; Kohji Kishio

doi:10.1109/TNS.2008.922820

Suppression of host luminescence in the Pr:LuAG scintillator

Hiraku Ogino, Kei Kamada, Akira Yoshikawa, Fumio Saito, Jan Pejchal, Jiri A. Mares, Martin Nikl, Anna Vedda, Jun Ichi Shimoyama, Kohji Kishio

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Effect of Ga substitution in the (Lu, Pr) ₃Al ₅O ₁₂(Pr : LuAG) scintillator was examined at the crystals grown by the micropulling down (μ-PD) method. Host luminescence due to an exciten localized around the Lu-Al antisite defect was suppressed by Ga admixture. Concentration depenendence was investigated and suppression was observed even at the lowest Ga concentration of 5 mol%. Faster decay time as well as less intense slower components were obtained upon increasing the amount of Ga. In the thermostimulated luminescence measurement, the glow curve peaks are gradually shifted to lower temperatures with the gallium admixture, and noticeable intensity decrease was observed only for the (Lu, Pr) ₃(Ga _0.2Al _0.8) ₅O ₁₂. The undesired quenching effect of Ga on the Pr ³⁺ luminescence seems to be reasonably low up to (Lu, Pr) ₃(Ga _0.2Al _0.8) ₅O ₁₂ sample. It is estimated to introduce nonradiative losses of less than 10% with respect to Ga-free Pr:LuAG. Bulk crystals were also grown by the Czochralski (Cz) method and these effects were confirmed.

Original language	English
Article number	4545190
Pages (from-to)	1197-1200
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	55
Issue number	3
DOIs	https://doi.org/10.1109/TNS.2008.922820
Publication status	Published - 2008 Jun

Keywords

Gamma-ray detectors
Garnets
Nuclear imaging
Praseodymium compounds
Radioluminescence

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10.1109/TNS.2008.922820

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@article{eadf6b33f83e484f858d3466c2fb26f0,

title = "Suppression of host luminescence in the Pr:LuAG scintillator",

abstract = "Effect of Ga substitution in the (Lu, Pr) 3Al 5O 12(Pr : LuAG) scintillator was examined at the crystals grown by the micropulling down (μ-PD) method. Host luminescence due to an exciten localized around the Lu-Al antisite defect was suppressed by Ga admixture. Concentration depenendence was investigated and suppression was observed even at the lowest Ga concentration of 5 mol%. Faster decay time as well as less intense slower components were obtained upon increasing the amount of Ga. In the thermostimulated luminescence measurement, the glow curve peaks are gradually shifted to lower temperatures with the gallium admixture, and noticeable intensity decrease was observed only for the (Lu, Pr) 3(Ga 0.2Al 0.8) 5O 12. The undesired quenching effect of Ga on the Pr 3+ luminescence seems to be reasonably low up to (Lu, Pr) 3(Ga 0.2Al 0.8) 5O 12 sample. It is estimated to introduce nonradiative losses of less than 10% with respect to Ga-free Pr:LuAG. Bulk crystals were also grown by the Czochralski (Cz) method and these effects were confirmed.",

keywords = "Gamma-ray detectors, Garnets, Nuclear imaging, Praseodymium compounds, Radioluminescence",

author = "Hiraku Ogino and Kei Kamada and Akira Yoshikawa and Fumio Saito and Jan Pejchal and Mares, {Jiri A.} and Martin Nikl and Anna Vedda and Shimoyama, {Jun Ichi} and Kohji Kishio",

note = "Funding Information: Manuscript received June 21, 2007; revised October 22, 2007. This work was supported in part by a Grant-in-Aid for Young Scientists (B) no. 19750168, 2007, the Ministry of Education, Culture, Sports, Science and Technology of Japan; in part by the Regional Research and Development Utilization Program, Japan Science and Technology Agency; and by the Czech MSMT, KONTAKT Grant ME953. This work was also performed under the interuniversity cooperative research program of the Advanced Research Center of Metallic Glasses, Institute for Materials Research, Tohoku University.",

year = "2008",

month = jun,

doi = "10.1109/TNS.2008.922820",

language = "English",

volume = "55",

pages = "1197--1200",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Suppression of host luminescence in the Pr:LuAG scintillator

AU - Ogino, Hiraku

AU - Kamada, Kei

AU - Yoshikawa, Akira

AU - Saito, Fumio

AU - Pejchal, Jan

AU - Mares, Jiri A.

AU - Nikl, Martin

AU - Vedda, Anna

AU - Shimoyama, Jun Ichi

AU - Kishio, Kohji

N1 - Funding Information: Manuscript received June 21, 2007; revised October 22, 2007. This work was supported in part by a Grant-in-Aid for Young Scientists (B) no. 19750168, 2007, the Ministry of Education, Culture, Sports, Science and Technology of Japan; in part by the Regional Research and Development Utilization Program, Japan Science and Technology Agency; and by the Czech MSMT, KONTAKT Grant ME953. This work was also performed under the interuniversity cooperative research program of the Advanced Research Center of Metallic Glasses, Institute for Materials Research, Tohoku University.

PY - 2008/6

Y1 - 2008/6

N2 - Effect of Ga substitution in the (Lu, Pr) 3Al 5O 12(Pr : LuAG) scintillator was examined at the crystals grown by the micropulling down (μ-PD) method. Host luminescence due to an exciten localized around the Lu-Al antisite defect was suppressed by Ga admixture. Concentration depenendence was investigated and suppression was observed even at the lowest Ga concentration of 5 mol%. Faster decay time as well as less intense slower components were obtained upon increasing the amount of Ga. In the thermostimulated luminescence measurement, the glow curve peaks are gradually shifted to lower temperatures with the gallium admixture, and noticeable intensity decrease was observed only for the (Lu, Pr) 3(Ga 0.2Al 0.8) 5O 12. The undesired quenching effect of Ga on the Pr 3+ luminescence seems to be reasonably low up to (Lu, Pr) 3(Ga 0.2Al 0.8) 5O 12 sample. It is estimated to introduce nonradiative losses of less than 10% with respect to Ga-free Pr:LuAG. Bulk crystals were also grown by the Czochralski (Cz) method and these effects were confirmed.

AB - Effect of Ga substitution in the (Lu, Pr) 3Al 5O 12(Pr : LuAG) scintillator was examined at the crystals grown by the micropulling down (μ-PD) method. Host luminescence due to an exciten localized around the Lu-Al antisite defect was suppressed by Ga admixture. Concentration depenendence was investigated and suppression was observed even at the lowest Ga concentration of 5 mol%. Faster decay time as well as less intense slower components were obtained upon increasing the amount of Ga. In the thermostimulated luminescence measurement, the glow curve peaks are gradually shifted to lower temperatures with the gallium admixture, and noticeable intensity decrease was observed only for the (Lu, Pr) 3(Ga 0.2Al 0.8) 5O 12. The undesired quenching effect of Ga on the Pr 3+ luminescence seems to be reasonably low up to (Lu, Pr) 3(Ga 0.2Al 0.8) 5O 12 sample. It is estimated to introduce nonradiative losses of less than 10% with respect to Ga-free Pr:LuAG. Bulk crystals were also grown by the Czochralski (Cz) method and these effects were confirmed.

KW - Gamma-ray detectors

KW - Garnets

KW - Nuclear imaging

KW - Praseodymium compounds

KW - Radioluminescence

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U2 - 10.1109/TNS.2008.922820

DO - 10.1109/TNS.2008.922820

M3 - Article

AN - SCOPUS:45849123918

SN - 0018-9499

VL - 55

SP - 1197

EP - 1200

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 3

M1 - 4545190

ER -

Suppression of host luminescence in the Pr:LuAG scintillator

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