Suppression of Parallel Conduction at the Interface in β-Ga2O3 Homoepitaxial Layer Using Semi-Insulating Intermediate Layer

T. Saito, R. Wakabayashi, J. S. Lee, K. Kamei, K. Yoshimatsu, M. Kado, A. Ohtomo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Material Science