Suppression of SiN-induced boron penetration by using SiH-free silicon nitride films formed by tetrachlorosilane and ammonia

Masayuki Tanaka; Shigehiko Saida; Ichiro Mizushima; Fumihiko Inoue; Manabu Kojima; Tetsu Tanaka; Toshiro Nakanishi; Kyoichi Suguro; Yoshitaka Tsunashima

doi:10.1109/TED.2002.802630

Suppression of SiN-induced boron penetration by using SiH-free silicon nitride films formed by tetrachlorosilane and ammonia

Masayuki Tanaka, Shigehiko Saida, Ichiro Mizushima, Fumihiko Inoue, Manabu Kojima, Tetsu Tanaka, Toshiro Nakanishi, Kyoichi Suguro, Yoshitaka Tsunashima

MEN - Biomedical Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Applications of SiH-free silicon nitride (SiN) films, formed by tetrachlorosilane (TCS) and ammonia, have been proved to effectively suppress the SiN-induced boron penetration. The SiN-induced boron penetration has been investigated in detail by using boron-doped polysilicon gated capacitors with several kinds of thick SiN films. It was clarified for the first time that the SiN-induced boron penetration becomes worse with SiH content in SiN films and deposition technique of SiH-free TCS-SiN films is essential for realization of the high-performance PMOSFETs.

Original language	English
Pages (from-to)	1526-1531
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	9
DOIs	https://doi.org/10.1109/TED.2002.802630
Publication status	Published - 2002 Sept

Keywords

Boron penetration
Hydrogen
Silicon nitride

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10.1109/TED.2002.802630

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abstract = "Applications of SiH-free silicon nitride (SiN) films, formed by tetrachlorosilane (TCS) and ammonia, have been proved to effectively suppress the SiN-induced boron penetration. The SiN-induced boron penetration has been investigated in detail by using boron-doped polysilicon gated capacitors with several kinds of thick SiN films. It was clarified for the first time that the SiN-induced boron penetration becomes worse with SiH content in SiN films and deposition technique of SiH-free TCS-SiN films is essential for realization of the high-performance PMOSFETs.",

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T1 - Suppression of SiN-induced boron penetration by using SiH-free silicon nitride films formed by tetrachlorosilane and ammonia

AU - Tanaka, Masayuki

AU - Saida, Shigehiko

AU - Mizushima, Ichiro

AU - Inoue, Fumihiko

AU - Kojima, Manabu

AU - Tanaka, Tetsu

AU - Nakanishi, Toshiro

AU - Suguro, Kyoichi

AU - Tsunashima, Yoshitaka

PY - 2002/9

Y1 - 2002/9

N2 - Applications of SiH-free silicon nitride (SiN) films, formed by tetrachlorosilane (TCS) and ammonia, have been proved to effectively suppress the SiN-induced boron penetration. The SiN-induced boron penetration has been investigated in detail by using boron-doped polysilicon gated capacitors with several kinds of thick SiN films. It was clarified for the first time that the SiN-induced boron penetration becomes worse with SiH content in SiN films and deposition technique of SiH-free TCS-SiN films is essential for realization of the high-performance PMOSFETs.

AB - Applications of SiH-free silicon nitride (SiN) films, formed by tetrachlorosilane (TCS) and ammonia, have been proved to effectively suppress the SiN-induced boron penetration. The SiN-induced boron penetration has been investigated in detail by using boron-doped polysilicon gated capacitors with several kinds of thick SiN films. It was clarified for the first time that the SiN-induced boron penetration becomes worse with SiH content in SiN films and deposition technique of SiH-free TCS-SiN films is essential for realization of the high-performance PMOSFETs.

KW - Boron penetration

KW - Hydrogen

KW - Silicon nitride

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JF - IEEE Transactions on Electron Devices

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Suppression of SiN-induced boron penetration by using SiH-free silicon nitride films formed by tetrachlorosilane and ammonia

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Keywords

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