@inproceedings{dea1a0d5794842aaac18fd4c8ddacc3d,
title = "Suppression of structural imperfection in strained Si thin film by utilizing SiGe bulk substrate",
abstract = "We demonstrate suppression of structural imperfection in strained Si by utilizing homemade SiGe bulk crystal as a substrate. X-ray reciprocal space mapping clarified that the growth of a Si thin film on a SiGe bulk substrate leads to reduction in the orientation fluctuation compared with that on a SiGe virtual substrate. Furthermore, analysis of Raman spectra revealed dramatic decrease of the strain fluctuation in the strained Si film on the SiGe bulk substrate. These results suggest that the SiGe bulk crystal can be utilized as a substrate for various strain-controlled heterostructures for fundamental studies as well as improvement of device performance. copyright The Electrochemical Society.",
author = "Noritaka Usami and Yoshitaro Nose and Kozo Fujiwara and Kazuo Nakajima",
year = "2006",
doi = "10.1149/1.2355825",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "299--302",
booktitle = "SiGe and Ge",
edition = "7",
note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}