Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

Mei Yin Chan; Katsuyoshi Komatsu; Song Lin Li; Yong Xu; Peter Darmawan; Hiromi Kuramochi; Shu Nakaharai; Alex Aparecido-Ferreira; Kenji Watanabe; Takashi Taniguchi; Kazuhito Tsukagoshi

doi:10.1039/c3nr03220e

Suppression of thermally activated carrier transport in atomically thin MoS₂ on crystalline hexagonal boron nitride substrates

Mei Yin Chan, Katsuyoshi Komatsu, Song Lin Li, Yong Xu, Peter Darmawan, Hiromi Kuramochi, Shu Nakaharai, Alex Aparecido-Ferreira, Kenji Watanabe, Takashi Taniguchi, Kazuhito Tsukagoshi

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

We present the temperature-dependent carrier mobility of atomically thin MoS₂ field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO₂ substrates. Our results reveal distinct weak temperature dependence of the MoS₂ devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS₂ devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS₂ devices.

Original language	English
Pages (from-to)	9572-9576
Number of pages	5
Journal	Nanoscale
Volume	5
Issue number	20
DOIs	https://doi.org/10.1039/c3nr03220e
Publication status	Published - 2013 Oct 21
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)

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abstract = "We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices.",

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AU - Chan, Mei Yin

AU - Komatsu, Katsuyoshi

AU - Li, Song Lin

AU - Xu, Yong

AU - Darmawan, Peter

AU - Kuramochi, Hiromi

AU - Nakaharai, Shu

AU - Aparecido-Ferreira, Alex

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Tsukagoshi, Kazuhito

PY - 2013/10/21

Y1 - 2013/10/21

N2 - We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices.

AB - We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices.

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Suppression of thermally activated carrier transport in atomically thin MoS₂ on crystalline hexagonal boron nitride substrates

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