Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

T. Matsukawa; Y. X. Liu; W. Mizubayashi; J. Tsukada; H. Yamauchi; K. Endo; Y. Ishikawa; S. Ouchi; H. Ota; S. Migita; Y. Morita; M. Masahara

doi:10.1063/1.4803040

Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

T. Matsukawa, Y. X. Liu, W. Mizubayashi, J. Tsukada, H. Yamauchi, K. Endo, Y. Ishikawa, S. Ouchi, H. Ota, S. Migita, Y. Morita, M. Masahara

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

An amorphous TaSiN metal gate (MG) is introduced into double-gate fin field-effect transistors (FinFETs) to suppress work function variation (WFV) of the MG, which is a dominant source of threshold voltage (V_t) variability for MG FinFETs. Comparing with a poly-crystalline TiN gate, the TaSiN gate reduces V_t variation dramatically and thus records the smallest A_Vt value of 1.34 mV μm reported so far for the MG-FinFETs. By decomposing the variation source due to interface trap density, the WFV suppression using the amorphous MG is confirmed to be effective to achieve the well-suppressed variability of the MG-FinFETs.

Original language	English
Article number	162104
Journal	Applied Physics Letters
Volume	102
Issue number	16
DOIs	https://doi.org/10.1063/1.4803040
Publication status	Published - 2013 Apr 22
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4803040

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Matsukawa, T., Liu, Y. X., Mizubayashi, W., Tsukada, J., Yamauchi, H., Endo, K., Ishikawa, Y., Ouchi, S., Ota, H., Migita, S., Morita, Y., & Masahara, M. (2013). Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function. Applied Physics Letters, 102(16), [162104]. https://doi.org/10.1063/1.4803040

Matsukawa, T, Liu, YX, Mizubayashi, W, Tsukada, J, Yamauchi, H, Endo, K, Ishikawa, Y, Ouchi, S, Ota, H, Migita, S, Morita, Y & Masahara, M 2013, 'Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function', Applied Physics Letters, vol. 102, no. 16, 162104. https://doi.org/10.1063/1.4803040

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title = "Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function",

abstract = "An amorphous TaSiN metal gate (MG) is introduced into double-gate fin field-effect transistors (FinFETs) to suppress work function variation (WFV) of the MG, which is a dominant source of threshold voltage (Vt) variability for MG FinFETs. Comparing with a poly-crystalline TiN gate, the TaSiN gate reduces Vt variation dramatically and thus records the smallest AVt value of 1.34 mV μm reported so far for the MG-FinFETs. By decomposing the variation source due to interface trap density, the WFV suppression using the amorphous MG is confirmed to be effective to achieve the well-suppressed variability of the MG-FinFETs.",

author = "T. Matsukawa and Liu, {Y. X.} and W. Mizubayashi and J. Tsukada and H. Yamauchi and K. Endo and Y. Ishikawa and S. Ouchi and H. Ota and S. Migita and Y. Morita and M. Masahara",

note = "Funding Information: This work was partly supported by NEDO under the Development of Nanoelectronics Devices Technology. ",

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T1 - Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

AU - Matsukawa, T.

AU - Liu, Y. X.

AU - Mizubayashi, W.

AU - Tsukada, J.

AU - Yamauchi, H.

AU - Endo, K.

AU - Ishikawa, Y.

AU - Ouchi, S.

AU - Ota, H.

AU - Migita, S.

AU - Morita, Y.

AU - Masahara, M.

N1 - Funding Information: This work was partly supported by NEDO under the Development of Nanoelectronics Devices Technology.

PY - 2013/4/22

Y1 - 2013/4/22

N2 - An amorphous TaSiN metal gate (MG) is introduced into double-gate fin field-effect transistors (FinFETs) to suppress work function variation (WFV) of the MG, which is a dominant source of threshold voltage (Vt) variability for MG FinFETs. Comparing with a poly-crystalline TiN gate, the TaSiN gate reduces Vt variation dramatically and thus records the smallest AVt value of 1.34 mV μm reported so far for the MG-FinFETs. By decomposing the variation source due to interface trap density, the WFV suppression using the amorphous MG is confirmed to be effective to achieve the well-suppressed variability of the MG-FinFETs.

AB - An amorphous TaSiN metal gate (MG) is introduced into double-gate fin field-effect transistors (FinFETs) to suppress work function variation (WFV) of the MG, which is a dominant source of threshold voltage (Vt) variability for MG FinFETs. Comparing with a poly-crystalline TiN gate, the TaSiN gate reduces Vt variation dramatically and thus records the smallest AVt value of 1.34 mV μm reported so far for the MG-FinFETs. By decomposing the variation source due to interface trap density, the WFV suppression using the amorphous MG is confirmed to be effective to achieve the well-suppressed variability of the MG-FinFETs.

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Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

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