An amorphous TaSiN metal gate (MG) is introduced into double-gate fin field-effect transistors (FinFETs) to suppress work function variation (WFV) of the MG, which is a dominant source of threshold voltage (Vt) variability for MG FinFETs. Comparing with a poly-crystalline TiN gate, the TaSiN gate reduces Vt variation dramatically and thus records the smallest AVt value of 1.34 mV μm reported so far for the MG-FinFETs. By decomposing the variation source due to interface trap density, the WFV suppression using the amorphous MG is confirmed to be effective to achieve the well-suppressed variability of the MG-FinFETs.
|Journal||Applied Physics Letters|
|Publication status||Published - 2013 Apr 22|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)