Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

Yukiko Yamada-Takamura; Z. T. Wang; Y. Fujikawa; T. Sakurai; Q. K. Xue; J. Tolle; P. L. Liu; A. V.G. Chizmeshya; J. Kouvetakis; I. S.T. Tsong

doi:10.1103/PhysRevLett.95.266105

Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

Yukiko Yamada-Takamura, Z. T. Wang, Y. Fujikawa, T. Sakurai, Q. K. Xue, J. Tolle, P. L. Liu, A. V.G. Chizmeshya, J. Kouvetakis, I. S.T. Tsong

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB2 buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB2(0001) clarify the origin of the N polarity.

Original language	English
Article number	266105
Journal	Physical Review Letters
Volume	95
Issue number	26
DOIs	https://doi.org/10.1103/PhysRevLett.95.266105
Publication status	Published - 2005 Dec 31

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.95.266105

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title = "Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers",

abstract = "Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB2 buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB2(0001) clarify the origin of the N polarity.",

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year = "2005",

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T1 - Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

AU - Yamada-Takamura, Yukiko

AU - Wang, Z. T.

AU - Fujikawa, Y.

AU - Sakurai, T.

AU - Xue, Q. K.

AU - Tolle, J.

AU - Liu, P. L.

AU - Chizmeshya, A. V.G.

AU - Kouvetakis, J.

AU - Tsong, I. S.T.

PY - 2005/12/31

Y1 - 2005/12/31

N2 - Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB2 buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB2(0001) clarify the origin of the N polarity.

AB - Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB2 buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB2(0001) clarify the origin of the N polarity.

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Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

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